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SP012N03BGHTD

Public Made by Adom

by adom

Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP012N03BGHTD

Siliup · MOSFETs · TO-263

SP012N03BGHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 2.8 to 3.8 V at ID=250μA.
2 D passive Drain; drain-source voltage 120 V max, continuous current 180 A at Tc=25℃ and pulsed 720 A.
3 S passive Source; body-diode continuous current up to 180 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 120 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current ID 180 A Tc=25℃ 2
Continuous Drain Current ID 120 A Tc=100℃ 2
Pulsed Drain Current IDM 720 A 2
Single Pulse Avalanche Energy EAS 900 mJ VDD=50V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 230 W Tc=25℃ 2
Power Dissipation PD 92 W Tc=100℃ 2
Thermal Resistance Junction-to-Case RθJC 0.54 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 120 V ID=250μA, VGS=0V 2
Drain Cut-Off Current IDSS 1 μA VDS=96V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2.8 3.2 3.8 V VDS=VGS, ID=250μA 2
Drain-Source ON Resistance RDS(ON) 3.6 4.7 mΩ VGS=10V, ID=50A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS=1A, VGS=0V, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 180 A 2
Gate Resistance RG 1.6 Ω f=1MHz 2
Input Capacitance Ciss 5640 pF VDS=60V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 1049 pF VDS=60V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 36 pF VDS=60V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 104 nC VDS=60V, VGS=10V, ID=75A 2
Gate-Source Charge Qgs 26 nC VDS=60V, VGS=10V, ID=75A 2
Gate-Drain Charge Qgd 18 nC VDS=60V, VGS=10V, ID=75A 2
Gate Plateau Voltage Vplateau 4.6 V VDS=60V, VGS=10V, ID=75A 2
Turn-On Delay Time td(on) 28 nS VGS=10V, VDS=50V, ID=75A, RG=1.6Ω 2
Rise Time tr 18 nS VGS=10V, VDS=50V, ID=75A, RG=1.6Ω 2
Turn-Off Delay Time td(off) 38 nS VGS=10V, VDS=50V, ID=75A, RG=1.6Ω 2
Fall Time tf 12 nS VGS=10V, VDS=50V, ID=75A, RG=1.6Ω 2
Reverse Recovery Time Trr 88 nS IS=100A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 166 nC IS=100A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP012N03BGHTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp012n03bghtd-etched.step / sp012n03bghtd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp012n03bghtd.step / sp012n03bghtd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 f494bff315ab85f7, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF