component
SP010P35GTH
Public Made by Adomby adom
Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
| sp010p35gth-etched.glb | 23d ago |
| sp010p35gth-etched.step | 23d ago |
| sp010p35gth-hero.glb | 23d ago |
| sp010p35gth-hero.overlay.json | 23d ago |
| sp010p35gth.glb | 23d ago |
| sp010p35gth.kicad_mod | 23d ago |
| sp010p35gth.kicad_sym | 23d ago |
| sp010p35gth.lbr | 23d ago |
| sp010p35gth.step | 23d ago |
SP010P35GTH
Siliup · MOSFETs · TO-252
SP010P35GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET, with a gate-source voltage rating of ±20 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal of the MOSFET, with a drain-source voltage rating of -100 V (VDS) and a continuous drain current of -30 A at Tc=25℃. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate electrical limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -30 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | -20 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | -120 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 240 | mJ | 2 | |||
| Power Dissipation | PD | 125 | W | Tc=25℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 1 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | ID = -250μA, VGS = 0V | 2 | ||
| Drain Cut-Off Current | IDSS | -1 | uA | VDS = -80V, VGS = 0V | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source ON Resistance | RDS(ON) | 35 | 50 | mΩ | VGS=-10V, ID=-15A | 2 | |
| Drain-Source ON Resistance | RDS(ON) | 45 | 65 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | -30 | A | 2 |
CAD (KiCad official)
- Symbol:
SP010P35GTH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sp010p35gth-etched.step/sp010p35gth-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp010p35gth.step/sp010p35gth.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
72d910efd80c0067, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).