component
SP010P10GHTD
Public Made by Adomby adom
Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13h ago |
| viewers | 13h ago |
| package.json | 13h ago |
| page.json | 13h ago |
| README.md | 13h ago |
| sp010p10ghtd-etched.glb | 13h ago |
| sp010p10ghtd-etched.step | 13h ago |
| sp010p10ghtd-hero.glb | 13h ago |
| sp010p10ghtd-hero.overlay.json | 13h ago |
| sp010p10ghtd.glb | 13h ago |
| sp010p10ghtd.kicad_mod | 13h ago |
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| sp010p10ghtd.lbr | 13h ago |
| sp010p10ghtd.step | 13h ago |
SP010P10GHTD
Siliup · MOSFETs · TO-263
SP010P10GHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the datasheet rates the gate-source voltage at ±20 V. |
| 2 | D | passive | Drain terminal of the MOSFET; the datasheet rates the drain-source voltage at -100 V. |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet gives no separate voltage or current limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V , ID= -250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-80V , VGS=0V , TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -2 | -3 | -4 | V | VGS=VDS , ID = -250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 13 | mΩ | VGS=-10V , ID= -20A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | -120 | A | 2 | |||
| Drain-Source Voltage | VDS | -100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | -120 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | -80 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | -480 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 820 | mJ | 2 | |||
| Power Dissipation | PD | 232 | W | Tc=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.54 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
SP010P10GHTD - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sp010p10ghtd-etched.step/sp010p10ghtd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp010p10ghtd.step/sp010p10ghtd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
368ee73ab2b6e242, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).