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SP010N13GTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssp010n13gthfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SP010N13GTH

Siliup · MOSFETs · TO-252

SP010N13GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage rated VGS ±20 V per the absolute maximum ratings.
2 D passive Drain of the MOSFET, with drain-source voltage rated VDS 100 V and continuous drain current ID 45 A at Tc=25℃.
3 S passive Source of the MOSFET, the reference terminal for VGS, with maximum body-diode continuous current IS 45 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 45 A Tc=25℃ 2
Continuous Drain Current ID 30 A Tc=100℃ 2
Pulsed Drain Current IDM 180 A 2
Single Pulse Avalanche Energy EAS 144 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25Ω (note 1) 2
Power Dissipation PD 75 W Tc=25℃ 2
Thermal Resistance Junction-to-Case RθJC 1.67 ℃/W 2
Storage Temperature Range TSTG 150 ℃ 2
Operating Junction Temperature Range TJ 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 100 V ID = 250μA, VGS = 0V 2
Drain Cut-Off Current IDSS 1 uA VDS = 80V, VGS = 0V 2
Gate Leakage Current IGSS -0.1 0.1 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1 1.8 2.5 V VDS = VGS, ID = 250μA 2
Drain-Source ON Resistance RDS(ON) 13 17 mΩ VGS = 10V, ID = 20A 2
Drain-Source ON Resistance RDS(ON) 16 21 mΩ VGS = 4.5V, ID = 10A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 45 A 2

CAD (KiCad official)

  • Symbol: SP010N13GTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp010n13gth-etched.step / sp010n13gth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n13gth.step / sp010n13gth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 a614de35efb2b821, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF