component
SP010N110GT1
Public Made by Adomby adom
Siliup MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| sp010n110gt1-etched.glb | 16d ago |
| sp010n110gt1-etched.step | 16d ago |
| sp010n110gt1-hero.glb | 16d ago |
| sp010n110gt1-hero.overlay.json | 16d ago |
| sp010n110gt1.glb | 16d ago |
| sp010n110gt1.kicad_mod | 16d ago |
| sp010n110gt1.kicad_sym | 16d ago |
| sp010n110gt1.lbr | 16d ago |
| sp010n110gt1.step | 16d ago |
SP010N110GT1
Siliup · MOSFETs · SOT-23-3L
SP010N110GT1 from Siliup, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 to 2.5 V at 250 µA. |
| 2 | S | passive | Source; continuous drain current 3 A, with body diode forward voltage up to 1.2 V at IS=1 A. |
| 3 | D | passive | Drain; drain-source voltage rated 100 V, continuous drain current 3 A and pulsed drain current 12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | 140 | mΩ | VGS=10V, ID=3A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 160 | 300 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDSS | 100 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | Ta=25℃ | 2 | |
| Continuous Drain Current | ID | 3 | A | Ta=25℃ | 2 | ||
| Pulse Drain Current Tested | IDM | 12 | A | Ta=25℃ | 2 | ||
| Power Dissipation | PD | 1.2 | W | Ta=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | Ta=25℃ | 2 | |
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | Ta=25℃ | 2 | |
| Thermal Resistance Junction-to-Ambient | RθJA | 104 | °C/W | Ta=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SP010N110GT1 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
sp010n110gt1-etched.step/sp010n110gt1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp010n110gt1.step/sp010n110gt1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
7b6f569f81ad1cde, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).