# SP010N10HTQ

**Siliup** · MOSFETs · TO-220-3L

SP010N10HTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the datasheet rates gate-source voltage VGS at ±20 V. |
| 2 | D | passive | Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDS at 100 V and continuous drain current ID at 100 A (Tc=25℃). |
| 3 | S | passive | Source terminal of the MOSFET; the datasheet rates the diode continuous current IS at 100 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS=0V , ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=80V , VGS=0V , TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V , VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS , ID =250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 10 | 13 | mΩ | VGS=10V , ID=40A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V , IS=40A , TJ=25℃ | 2 |
| Diode Continuous Current | IS |  |  | 100 | A |  | 2 |
| Drain source voltage | VDS |  |  | 100 | V |  | 2 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous drain current | ID |  |  | 100 | A | Tc=25℃ | 2 |
| Continuous drain current | ID |  |  | 80 | A | Tc=100℃ | 2 |
| Pulsed drain current | IDM |  |  | 400 | A |  | 2 |
| Single pulsed avalanche energy | EAS |  |  | 720 | mJ | Note 1: starting Tj = 25℃, VDD=50V, VGS = 10V, L = 0.5mH, Rg=25Ω | 2 |
| Power dissipation | PD |  |  | 200 | W | Tc=25℃ | 2 |
| Thermal resistance, junction-case | RθJC |  |  | 0.625 | ℃/W |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |

## CAD (KiCad official)

- Symbol: `SP010N10HTQ`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files: `sp010n10htq-etched.step` / `sp010n10htq-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sp010n10htq.step` / `sp010n10htq.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Siliup datasheet](docs/sp010n10htq-datasheet.pdf) (6 pp, sha256 `bcc7aaf1e8fc4b3f`, retrieved 2026-10-31, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sp010n10htq-datasheet.pdf)