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SP010N07GHTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP010N07GHTH

Siliup · MOSFETs · TO-252

SP010N07GHTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20 V with threshold of 2 V min to 4 V max at ID = 250μA.
2 D passive Drain terminal; drain-source voltage is rated 100 V with continuous drain current of 80 A at Tc=25℃ and pulsed drain current of 320 A.
3 S passive Source terminal; maximum body-diode continuous current is 80 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V ID = 250μA, VGS = 0V 2
Drain Cut-Off Current IDSS 1 uA VDS = 80V, VGS = 0V 2
Gate Leakage Current IGSS -0.1 0.1 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250μA 2
Drain-Source ON Resistance RDS(ON) 6.9 8.7 mΩ VGS = 10V, ID = 30A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 80 A 2
Drain-Source Voltage VDS 100 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current (Tc=25℃) ID 80 A Tc=25℃ 2
Continuous Drain Current (Tc=100℃) ID 55 A Tc=100℃ 2
Pulsed Drain Current IDM 320 A Ta=25℃ 2
Single Pulse Avalanche Energy EAS 289 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25Ω 2
Power Dissipation (Tc=25℃) PD 120 W Tc=25℃ 2
Storage Temperature Range TSTG 55 150 ℃ printed as '55 to 150' 2
Operating Junction Temperature Range TJ 55 150 ℃ printed as '55 to 150' 2
Thermal Resistance Junction-to-Case RθJC 1.04 ℃/W 2
Input Capacitance Ciss 1728 pF VDS =50V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 393 pF VDS =50V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 8.9 pF VDS =50V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge Qg 26 nC VDS=50V , VGS=10V , ID=50A 2
Gate-Source Charge Qgs 4 nC VDS=50V , VGS=10V , ID=50A 2
Gate-Drain Charge Qgd 4.5 nC VDS=50V , VGS=10V , ID=50A 2
Turn-On Delay Time td(on) 6 nS VGS = 50V, VDS =50V, ID=50A, RG = 4.7Ω 2
Rise Time tr 9.6 nS VGS = 50V, VDS =50V, ID=50A, RG = 4.7Ω 2
Turn-Off Delay Time td(off) 31 nS VGS = 50V, VDS =50V, ID=50A, RG = 4.7Ω 2
Fall Time tf 14 nS VGS = 50V, VDS =50V, ID=50A, RG = 4.7Ω 2
Reverse Recovery Time Trr 49 nS IS=15A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 42 nC IS=15A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP010N07GHTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp010n07ghth-etched.step / sp010n07ghth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n07ghth.step / sp010n07ghth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 b7ce17f63a5e056a, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF