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SP010N04BGTD

Public Made by Adom

by adom

Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

markdown

SP010N04BGTD

Siliup · MOSFETs · TO-263

SP010N04BGTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits gate-source voltage to VGSS ±20 V and gate threshold VGS(th) is 1.3 to 2.3 V at ID=250uA.
2 D passive Drain terminal; the device is rated for VDSS 100 V and continuous drain current ID 125 A at Tc=25°C.
3 S passive Source terminal; it is the reference for the VGSS ±20 V and VDSS 100 V ratings.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 125 A Tc=25°C 2
Continuous Drain Current ID 83 A Tc=100°C 2
Pulse Drain Current IDM 500 A Tested 2
Single pulsed avalanche energy EAS 361 mJ VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω 2
Power Dissipation PD 185 W Tc=25°C 2
Power Dissipation PD 74 W Tc=100°C 2
Thermal Resistance Junction-to-Case RθJC 0.68 °C/W 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V , VGS=0V , TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 1.3 1.7 2.3 V VGS=VDS , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 4.9 6.1 mΩ VGS=10V , ID=30A 2
Static Drain-Source On-Resistance RDS(ON) 6.4 8.5 mΩ VGS=4.5V , ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Diode Continuous Current IS 125 A 2

CAD (KiCad official)

  • Symbol: SP010N04BGTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp010n04bgtd-etched.step / sp010n04bgtd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n04bgtd.step / sp010n04bgtd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 d3cd68e23813dcd9, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF