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SP010N02GHTF

Public Made by Adom

by adom

Siliup MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP010N02GHTF

Siliup · MOSFETs · TO-247

SP010N02GHTF from Siliup, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET, with a gate-source voltage rating of ±20 V per the absolute maximum ratings.
2 D passive Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 100 V per the absolute maximum ratings.
3 S passive Source terminal of the MOSFET, serving as the common return for the gate-source rating of ±20 V.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 210 A Tc=25℃ 2
Continuous Drain Current ID 140 A Tc=100℃ 2
Pulsed Drain Current IDM 840 A 2
Single Pulse Avalanche Energy EAS 1650 mJ VDD=50V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 255 W Tc=25℃ 2
Power Dissipation PD 102 W Tc=100℃ 2
Thermal Resistance Junction-to-Case RθJC 0.49 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 2
Drain Cut-Off Current IDSS 1 μA VDS=80V , VGS=0V , TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 2.6 3 3.4 V VGS=VDS , ID =250uA 2
Drain-Source ON Resistance RDS(ON) 2 2.5 mΩ VGS=10V , ID=20A 2
Gate Resistance RG 4.2 Ω f=1MHz 2
Input Capacitance Ciss 7100 pF VDS=50V , VGS=0V , f=1MHz 2
Output Capacitance Coss 2673 pF VDS=50V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 65 pF VDS=50V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 120 nC VDS=50V , VGS=10V , ID=20A 2
Gate-Source Charge Qgs 39 nC VDS=50V , VGS=10V , ID=20A 2
Gate-Drain Charge Qgd 24 nC VDS=50V , VGS=10V , ID=20A 2
Gate Plateau Voltage Vplateau 5 V 2
Turn-On Delay Time td(on) 28 nS VDD=50V , VGS=10V , RG=3Ω , ID=20A 2
Rise Time tr 28 nS 2
Turn-Off Delay Time td(off) 52 nS 2
Fall Time tf 20 nS 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS=1A , VGS=0V 2
Maximum Body-Diode Continuous Current IS 210 A 2
Reverse Recovery Time Trr 88 nS IS=20A , di/dt=100A/us , TJ=25℃ 2
Reverse Recovery Charge Qrr 208 nC 2

CAD (KiCad official)

  • Symbol: SP010N02GHTF
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: sp010n02ghtf-etched.step / sp010n02ghtf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n02ghtf.step / sp010n02ghtf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (7 pp, sha256 c413e4e96459acc7, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF