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SP010N02BGHTQ

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by adom

Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP010N02BGHTQ

Siliup · MOSFETs · TO-220-3L

SP010N02BGHTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V and threshold voltage of 2.6 to 3.4 V.
2 D passive Drain of the MOSFET, rated for 100 V drain-source voltage and 200 A continuous current (package limit at Tc=25℃).
3 S passive Source of the MOSFET, with a maximum body-diode continuous current of 200 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current (Package Limit) ID 200 A Tc=25℃ 2
Continuous Drain Current ID 133 A Tc=100℃ 2
Pulsed Drain Current IDM 800 A 2
Single Pulse Avalanche Energy EAS 1458 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25Ω 2
Power Dissipation PD 230 W Tc=25℃ 2
Power Dissipation PD 92 W Tc=100℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-to-Case RθJC 0.54 ℃/W 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Drain Cut-Off Current IDSS 1 μA VDS=80V, VGS=0V, TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2.6 3 3.4 V VGS=VDS, ID=250uA 2
Drain-Source ON Resistance RDS(ON) 2.35 3 mΩ VGS=10V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 200 A 2
Gate Resistance RG 4.8 Ω VDS=50V, VGS=0V, f=1MHz 2
Input Capacitance Ciss 7100 pF VDS=50V, VGS=0V, f=1MHz 2
Output Capacitance Coss 2673 pF VDS=50V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 65 pF VDS=50V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 120 nC VDS=50V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 45 nC VDS=50V, VGS=10V, ID=20A 2
Gate-Drain Charge Qgd 20 nC VDS=50V, VGS=10V, ID=20A 2
Gate Plateau Voltage Vpleteau 4.8 V VDS=50V, VGS=10V, ID=20A 2
Turn-On Delay Time td(on) 28 nS VDD=50V, VGS=10V, RG=1.6Ω, ID=20A 2
Rise Time tr 28 nS VDD=50V, VGS=10V, RG=1.6Ω, ID=20A 2
Turn-Off Delay Time td(off) 52 nS VDD=50V, VGS=10V, RG=1.6Ω, ID=20A 2
Fall Time tf 20 nS VDD=50V, VGS=10V, RG=1.6Ω, ID=20A 2
Reverse Recovery Time Trr 88 nS IS=20A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 208 nC IS=20A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP010N02BGHTQ
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: sp010n02bghtq-etched.step / sp010n02bghtq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n02bghtq.step / sp010n02bghtq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (7 pp, sha256 9dc824014b094b28, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF