component
SODDB3T RHG
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Taiwan Semiconductor Thyristor Surge Suppressors (TSS), SOD-123. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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SODDB3T RHG
Taiwan Semiconductor · Thyristor Surge Suppressors (TSS) · SOD-123
SODDB3T RHG from Taiwan Semiconductor, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised fuse; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised fuse; either orientation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| Package | SOD-123 |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown Voltage | VBO | 30 | 32 | 34 | V | C=22nF, SODDB3T | 1 |
| Breakdown Voltage Symmetry | /+VBO1/-/-VBO2/ | -2 | 2 | V | C=22nF, SODDB3T | 1 | |
| Dynamic Breakdown Voltage | /ΔV±/ | 9 | V | ΔI=[IBO to IF=10mA], SODDB3T | 1 | ||
| Breakdown Current | IBO | 15 | μA | C=22nF, SODDB3T | 1 | ||
| Output Voltage | VO | 5 | V | Test circuit for output voltage | 1 | ||
| Leakage Current | IR | 10 | μA | VB=0.5VBO | 1 | ||
| Rest Time | tr | 1.5 | μs | 1 | |||
| Repetitive Peak on-state Current | ITRM | 2 | A | tp=20μs, f=100Hz | 1 | ||
| Power Dissipation | PD | 400 | mW | 1 | |||
| Junction Temperature | TJ | -40 | 125 | °C | 1 | ||
| Storage Temperature Range | TSTG | -40 | 125 | °C | 1 |
CAD (KiCad official)
- Symbol:
SODDB3T RHG - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files:
soddb3t-rhg-etched.step/soddb3t-rhg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);soddb3t-rhg.step/soddb3t-rhg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Taiwan Semiconductor datasheet (4 pp, sha256
7b458f41fec5200f, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarytwo-terminal convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SODDB3T RHG
**Taiwan Semiconductor** · Thyristor Surge Suppressors (TSS) · SOD-123
SODDB3T RHG from Taiwan Semiconductor, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of an unpolarised fuse; either orientation. |
| 2 | 2 | passive | Terminal 2 of an unpolarised fuse; either orientation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| Package | SOD-123 |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown Voltage | VBO | 30 | 32 | 34 | V | C=22nF, SODDB3T | 1 |
| Breakdown Voltage Symmetry | /+VBO1/-/-VBO2/ | -2 | | 2 | V | C=22nF, SODDB3T | 1 |
| Dynamic Breakdown Voltage | /ΔV±/ | 9 | | | V | ΔI=[IBO to IF=10mA], SODDB3T | 1 |
| Breakdown Current | IBO | | | 15 | μA | C=22nF, SODDB3T | 1 |
| Output Voltage | VO | 5 | | | V | Test circuit for output voltage | 1 |
| Leakage Current | IR | | | 10 | μA | VB=0.5VBO | 1 |
| Rest Time | tr | 1.5 | | | μs | | 1 |
| Repetitive Peak on-state Current | ITRM | | | 2 | A | tp=20μs, f=100Hz | 1 |
| Power Dissipation | PD | | | 400 | mW | | 1 |
| Junction Temperature | TJ | -40 | | 125 | °C | | 1 |
| Storage Temperature Range | TSTG | -40 | | 125 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `SODDB3T RHG`
- Footprint: `Diode_SMD:D_SOD-123F`
- 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files: `soddb3t-rhg-etched.step` / `soddb3t-rhg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `soddb3t-rhg.step` / `soddb3t-rhg.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Taiwan Semiconductor datasheet](docs/soddb3t-rhg-datasheet.pdf) (4 pp, sha256 `7b458f41fec5200f`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `two-terminal convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/soddb3t-rhg-datasheet.pdf)