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SN74HCT541N

TI(德州仪器) · Buffers, Drivers, Receivers, Transceivers · DIP-20

SN74HCT541N from TI(德州仪器), in a DIP-20. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OE1 input Output enable 1; when OE1 or OE2 is high, all eight outputs are forced to the high-impedance state, so outputs are active only when both enables are low.
2 A1 input Data input for buffer channel 1, passed non-inverted to Y1 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
3 A2 input Data input for buffer channel 2, passed non-inverted to Y2 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
4 A3 input Data input for buffer channel 3, passed non-inverted to Y3 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
5 A4 input Data input for buffer channel 4, passed non-inverted to Y4 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
6 A5 input Data input for buffer channel 5, passed non-inverted to Y5 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
7 A6 input Data input for buffer channel 6, passed non-inverted to Y6 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
8 A7 input Data input for buffer channel 7, passed non-inverted to Y7 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
9 A8 input Data input for buffer channel 8, passed non-inverted to Y8 when the outputs are enabled; inputs must stay between 0 V and VCC and unused inputs must be tied to VCC or GND.
10 GND power_in Ground reference for the device.
11 Y8 tri_state Three-state buffered output of channel 8 that follows A8 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
12 Y7 tri_state Three-state buffered output of channel 7 that follows A7 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
13 Y6 tri_state Three-state buffered output of channel 6 that follows A6 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
14 Y5 tri_state Three-state buffered output of channel 5 that follows A5 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
15 Y4 tri_state Three-state buffered output of channel 4 that follows A4 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
16 Y3 tri_state Three-state buffered output of channel 3 that follows A3 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
17 Y2 tri_state Three-state buffered output of channel 2 that follows A2 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
18 Y1 tri_state Three-state buffered output of channel 1 that follows A1 and can drive up to 15 LSTTL loads (±6 mA at 5 V); it is high impedance when OE1 or OE2 is high.
19 OE2 input Output enable 2; when OE2 or OE1 is high, all eight outputs are forced to the high-impedance state, so outputs are active only when both enables are low.
20 VCC power_in Supply voltage, 4.5 V to 5.5 V recommended (5 V nominal), with a 0.1-µF bypass capacitor placed as close to the pin as possible.

Key specifications

Parameter Value
Manufacturer TI(德州仪器)
Package DIP-20
Category Logic
Pins 20

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage range VCC -0.5 7 V 4
Input clamp current IIK -20 20 mA VI < 0 or VI > VCC 4
Output clamp current IOK -20 20 mA VO < 0 or VO > VCC 4
Continuous output current IO -35 35 mA VO = 0 to VCC 4
Continuous current through VCC or GND -70 70 mA 4
Junction temperature TJ 150 °C 4
Storage temperature range Tstg -65 150 °C 4
Supply voltage VCC 4.5 5 5.5 V 4
High-level input voltage VIH 2 V VCC = 4.5 V to 5.5 V 4
Low-level input voltage VIL 0.8 V VCC = 4.5 V to 5.5 V 4
Input voltage VI 0 V 4
Output voltage VO 0 V 4
Input transition rise and fall time ∆t/∆v 500 ns 4
Operating free-air temperature TA -40 85 °C 4
High-level output voltage VOH 4.4 4.499 V VI = VIH or VIL; IOH = −20 µA; VCC = 4.5 V 5
High-level output voltage VOH 3.84 4.3 V VI = VIH or VIL; IOH = −6 mA; VCC = 4.5 V 5
Low-level output voltage VOL 0.001 0.1 V VI = VIH or VIL; IOL = 20 µA; VCC = 4.5 V 5
Low-level output voltage VOL 0.17 0.33 V VI = VIH or VIL; IOL = 6 mA; VCC = 4.5 V 5
Input leakage current II -1000 0.1 1000 nA VI = VCC or 0; VCC = 5.5 V 5
Off-state (high-impedance) output current IOZ -5 0.01 5 µA VO = VCC or 0; VI = VIH or VIL; VCC = 5.5 V 5
Supply current ICC 8 80 µA VI = VCC or 0; IO = 0; VCC = 5.5 V 5
Supply current increase per TTL-level input ∆ICC 1.4 2.9 mA One input at 0.5 V or 2.4 V, other inputs at 0 or VCC; VCC = 5.5 V 5
Input capacitance Ci 3 10 pF VCC = 4.5 V to 5.5 V 5
Propagation delay A to Y tpd 13 29 ns CL = 50 pF; VCC = 4.5 V; A to Y 5
Propagation delay A to Y tpd 12 26 ns CL = 50 pF; VCC = 5.5 V; A to Y 5
Enable time OE to Y ten 21 38 ns CL = 50 pF; VCC = 4.5 V; OE to Y 5
Enable time OE to Y ten 19 34 ns CL = 50 pF; VCC = 5.5 V; OE to Y 5
Disable time OE to Y tdis 19 38 ns CL = 50 pF; VCC = 4.5 V; OE to Y 5
Disable time OE to Y tdis 18 34 ns CL = 50 pF; VCC = 5.5 V; OE to Y 5
Output transition time Y tt 8 15 ns CL = 50 pF; VCC = 4.5 V; Y 5
Output transition time Y tt 7 14 ns CL = 50 pF; VCC = 5.5 V; Y 5
Propagation delay A to Y tpd 20 42 ns CL = 150 pF; VCC = 4.5 V; A to Y 5
Propagation delay A to Y tpd 19 38 ns CL = 150 pF; VCC = 5.5 V; A to Y 5
Enable time OE to Y ten 26 50 ns CL = 150 pF; VCC = 4.5 V; OE to Y 5
Enable time OE to Y ten 25 45 ns CL = 150 pF; VCC = 5.5 V; OE to Y 5
Output transition time Y tt 17 53 ns CL = 150 pF; VCC = 4.5 V; Y 5
Output transition time Y tt 14 48 ns CL = 150 pF; VCC = 5.5 V; Y 5
Junction-to-ambient thermal resistance RθJA 84.6 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 72.5 °C/W 4
Junction-to-board thermal resistance RθJB 65.3 °C/W 4

CAD (KiCad official)

  • Symbol: SN74HCT541N
  • Footprint: Package_DIP:DIP-20_W7.62mm
  • 3D model: DIP-20 (KiCad packages3D, STEP)
  • 3D model files: sn74hct541n-etched.step / sn74hct541n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sn74hct541n.step / sn74hct541n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TI(德州仪器) datasheet (30 pp, sha256 429686d50f7863c5, retrieved 2026-10-19, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF