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SN7002WH6327

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Infineon Technologies MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SN7002WH6327

Infineon Technologies · MOSFETs · SOT-323

SN7002WH6327 from Infineon Technologies, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel logic-level MOSFET; VGS max ±20 V, threshold 0.8 V min to 1.8 V max at ID=26µA.
2 Source passive Source terminal of the N-channel MOSFET; continuous drain current 0.23 A at TA=25°C.
3 Drain passive Drain terminal of the N-channel MOSFET; VDS 60 V, RDS(on) 5 Ω, ID 0.23 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0, ID=250µA 2
Gate threshold voltage VGS(th) 0.8 1.4 1.8 V VGS = VDS, ID=26µA 2
Zero gate voltage drain current IDSS 0.1 µA VDS=60V, VGS=0, Tj=25°C 2
Zero gate voltage drain current IDSS 5 µA VDS=60V, VGS=0, Tj=150°C 2
Gate-source leakage current IGSS 10 nA VGS=20V, VDS=0 2
Drain-source on-state resistance RDS(on) 4.1 7.5 Ω VGS=4.5V, ID=0.2A 2
Drain-source on-state resistance RDS(on) 2.3 5 Ω VGS=10V, ID=0.23A 2
Transconductance gfs 0.1 0.21 S VDS≥2IDRDS(on)max, ID=0.18A 3
Input capacitance Ciss 34 45 pF VGS=0, VDS=25V, f=1MHz 3
Output capacitance Coss 7.2 9.6 pF VGS=0, VDS=25V, f=1MHz 3
Reverse transfer capacitance Crss 3 4.5 pF VGS=0, VDS=25V, f=1MHz 3
Turn-on delay time td(on) 2.4 3.6 ns VDD=30V, VGS=10V, ID=0.23A, RG=6Ω 3
Rise time tr 2.8 4.2 ns VDD=30V, VGS=10V, ID=0.23A, RG=6Ω 3
Turn-off delay time td(off) 6 9 ns VDD=30V, VGS=10V, ID=0.23A, RG=6Ω 3
Fall time tf 8.5 12.75 ns VDD=30V, VGS=10V, ID=0.23A, RG=6Ω 3
Gate to source charge Qgs 0.11 0.17 nC VDD=48V, ID=0.23A 3
Gate to drain charge Qgd 0.42 0.63 nC VDD=48V, ID=0.23A 3
Gate charge total Qg 1 1.5 nC VDD=48V, ID=0.23A, VGS=0 to 10V 3
Inverse diode continuous forward current IS 0.23 A TA=25°C 3
Inverse diode direct current, pulsed ISM 0.92 A TA=25°C 3
Inverse diode forward voltage VSD 0.85 1.2 V VGS=0, IF=0.23A 3
Reverse recovery time trr 10.8 16.2 ns VR=30V, IF=IS, diF/dt=100A/µs 3
Reverse recovery charge Qrr 3.2 4.8 nC VR=30V, IF=IS, diF/dt=100A/µs 3
Thermal resistance, junction - ambient RthJA 250 K/W at minimal footprint 2
Continuous drain current ID 0.23 A TA=25°C 1
Continuous drain current ID 0.18 A TA=70°C 1
Pulsed drain current ID puls 0.92 A TA=25°C 1
Reverse diode dv/dt dv/dt 6 kV/µs IS=0.23A, VDS=48V, di/dt=200A/µs, Tjmax=150°C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 0.5 W TA=25°C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Gate plateau voltage V(plateau) 3.4 V VDD=48V, ID = 0.23 A 3

CAD (KiCad official)

  • Symbol: SN7002WH6327
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: sn7002wh6327-etched.step / sn7002wh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sn7002wh6327.step / sn7002wh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 0e9a57474295dba7, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF