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Contents

README

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SMUN5235T1G

onsemi · Digital Transistors · SC-70-3

SMUN5235T1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base (input) of the NPN bias resistor transistor, connected through series resistor R1 = 2.2 kΩ, with input forward voltage max 12 Vdc and reverse voltage max 6 Vdc.
2 EMITTER power_in Emitter (ground) of the transistor, connected to the base through R2 = 47 kΩ (R1/R2 ratio 0.047 typ).
3 COLLECTOR output Collector (output) with VCEO max 50 Vdc, VCBO max 50 Vdc and continuous collector current max 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SC-70-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 50 Vdc TA = 25°C 1
Collector-Emitter Voltage VCEO 50 Vdc TA = 25°C 1
Collector Current - Continuous IC 100 mAdc TA = 25°C 1
Input Forward Voltage VIN(fwd) 12 Vdc TA = 25°C 1
Input Reverse Voltage VIN(rev) 6 Vdc TA = 25°C 1
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 4
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 4
Emitter-Base Cutoff Current IEBO 0.2 mAdc VEB = 6.0 V, IC = 0 4
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0 4
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0 (Note 5) 4
DC Current Gain hFE 80 140 IC = 5.0 mA, VCE = 10 V (Note 5) 4
Collector Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 1.0 mA (Note 5) 4
Input Voltage (off) Vi(off) 0.6 0.5 Vdc VCE = 5.0 V, IC = 100 A 4
Input Voltage (on) Vi(on) 1.1 0.8 Vdc VCE = 0.3 V, IC = 5.0 mA 4
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k 4
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k 4
Input Resistor R1 1.5 2.2 2.9 k 4
Resistor Ratio R1/R2 0.038 0.047 0.056 4
Total Device Dissipation (Note 1) PD 202 mW TA = 25°C, FR-4 @ Minimum Pad (SC-70/SOT-323) 3
Total Device Dissipation (Note 2) PD 310 mW TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (SC-70/SOT-323) 3
Derating above 25°C (Note 1) PD 1.6 mW/°C Derate above 25°C, FR-4 @ Minimum Pad 3
Derating above 25°C (Note 2) PD 2.5 mW/°C Derate above 25°C, FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Ambient (Note 1) RθJA 618 °C/W FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Ambient (Note 2) RθJA 403 °C/W FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Lead (Note 1) RθJL 280 °C/W FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Lead (Note 2) RθJL 332 °C/W FR-4 @ 1.0 x 1.0 Inch Pad 3
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 3

CAD (KiCad official)

  • Symbol: SMUN5235T1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SC-70-3 (KiCad packages3D, STEP)
  • 3D model files: smun5235t1g-etched.step / smun5235t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smun5235t1g.step / smun5235t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 dd0393fc2af83daf, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF