component
SMUN5235DW1T1G
Public Made by Adomby adom
onsemi Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSMUN5235DW1T1G
onsemi · Digital Transistors · SOT-363
SMUN5235DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER 2 | passive | Emitter of the Q2 NPN transistor in the dual bias resistor transistor network. |
| 2 | BASE 2 | input | Base of the Q2 NPN transistor, which connects to its integrated series base resistor R1 (2.2 k nominal). |
| 3 | COLLECTOR 1 | passive | Collector of the Q1 NPN transistor in the dual bias resistor transistor network; maximum collector current is 100 mAdc. |
| 4 | EMITTER 1 | passive | Emitter of the Q1 NPN transistor in the dual bias resistor transistor network. |
| 5 | BASE 1 | input | Base of the Q1 NPN transistor, which connects to its integrated series base resistor R1 (2.2 k nominal). |
| 6 | COLLECTOR 2 | passive | Collector of the Q2 NPN transistor in the dual bias resistor transistor network; maximum collector current is 100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc | 1 | |||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | 1 | |||
| Collector Current - Continuous | IC | 100 | mAdc | 1 | |||
| Input Forward Voltage | VIN(fwd) | 12 | Vdc | 1 | |||
| Input Reverse Voltage | VIN(rev) | 5 | Vdc | 1 | |||
| Collector-Base Cutoff Current | ICBO | 100 | nAdc | VCB = 50 V, IE = 0 | 3 | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc | VCE = 50 V, IB = 0 | 3 | ||
| Emitter-Base Cutoff Current | IEBO | 0.2 | mAdc | VEB = 6.0 V, IC = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | Vdc | IC = 10 A, IE = 0 | 3 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | IC = 2.0 mA, IB = 0 | 3 | ||
| DC Current Gain | hFE | 80 | 140 | IC = 5.0 mA, VCE = 10 V | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 1.0 mA | 3 | ||
| Output Voltage (On) | VOL | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k | 3 | ||
| Output Voltage (Off) | VOH | 4.9 | Vdc | VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k | 3 | ||
| Input Resistor R1 | R1 | 1.5 | 2.2 | 2.9 | k | 3 | |
| Resistor Ratio R1/R2 | R1/R2 | 0.038 | 0.047 | 0.056 | 3 | ||
| Input Voltage (Off) | Vi(off) | 0.6 | Vdc | VCE = 5.0 V, IC = 100 A | 3 | ||
| Input Voltage (On) | Vi(on) | 0.8 | Vdc | VCE = 0.2 V, IC = 5.0 mA | 3 | ||
| Total Device Dissipation, one junction heated | PD | 187 | mW | TA = 25°C (Note 1) | 2 | ||
| Total Device Dissipation, one junction heated | PD | 256 | mW | TA = 25°C (Note 2) | 2 | ||
| Derate above 25°C, one junction heated | 1.5 | mW/°C | Derate above 25°C (Note 1) | 2 | |||
| Derate above 25°C, one junction heated | 2 | mW/°C | Derate above 25°C (Note 2) | 2 | |||
| Thermal Resistance, Junction to Ambient, one junction heated | RJA | 670 | °C/W | Junction to Ambient (Note 1) | 2 | ||
| Thermal Resistance, Junction to Ambient, one junction heated | RJA | 490 | °C/W | Junction to Ambient (Note 2) | 2 | ||
| Total Device Dissipation, both junctions heated | PD | 250 | mW | TA = 25°C (Note 1) | 2 | ||
| Total Device Dissipation, both junctions heated | PD | 385 | mW | TA = 25°C (Note 2) | 2 | ||
| Derate above 25°C, both junctions heated | 2 | mW/°C | Derate above 25°C (Note 1) | 2 | |||
| Derate above 25°C, both junctions heated | 3 | mW/°C | Derate above 25°C (Note 2) | 2 | |||
| Thermal Resistance, Junction to Ambient, both junctions heated | RJA | 493 | °C/W | Junction to Ambient (Note 1) | 2 | ||
| Thermal Resistance, Junction to Ambient, both junctions heated | RJA | 325 | °C/W | Junction to Ambient (Note 2) | 2 | ||
| Thermal Resistance, Junction to Lead | RJL | 188 | °C/W | Junction to Lead (Note 1) | 2 | ||
| Thermal Resistance, Junction to Lead | RJL | 208 | °C/W | Junction to Lead (Note 2) | 2 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SMUN5235DW1T1G - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
smun5235dw1t1g-etched.step/smun5235dw1t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smun5235dw1t1g.step/smun5235dw1t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (11 pp, sha256
ea0470a50d6dd1c4, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).