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SMUN5232T1G

Public Made by Adom

by adom

onsemi Digital Transistors, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Ray smun5232t1g: specified limits as data (metadata.characteristics, 27 rows from the datasheet) e40032e 24d ago

SMUN5232T1G

onsemi · Digital Transistors · SOT-323-3

SMUN5232T1G from onsemi, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base (INPUT) pin of the NPN bias-resistor transistor; the datasheet gives input forward voltage VIN(fwd) max 30 Vdc and input reverse voltage VIN(rev) max 10 Vdc.
2 EMITTER power_in Emitter pin, labelled GROUND (EMITTER (GROUND)) on the datasheet pin diagram; the datasheet gives no separate voltage or current limit for this pin.
3 COLLECTOR output Collector (OUTPUT) pin; the datasheet limits are collector-emitter voltage VCEO 50 Vdc and continuous collector current IC 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-323-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 4
Collector−Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 4
Emitter−Base Cutoff Current IEBO 1.5 mAdc VEB = 6.0 V, IC = 0 4
Collector−Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0 4
Collector−Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0 4
DC Current Gain hFE 15 30 IC = 5.0 mA, VCE = 10 V 4
Collector−Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 1.0 mA 4
Input Voltage (off) Vi(off) 1.2 0.5 Vdc VCE = 5.0 V, IC = 100 A 4
Input Voltage (on) Vi(on) 2.5 2 Vdc VCE = 0.3 V, IC = 20 mA 4
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k 4
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k 4
Input Resistor R1 R1 3.3 4.7 6.1 k 4
Resistor Ratio R1/R2 0.8 1 1.2 4
Collector−Base Voltage VCBO 50 Vdc 1
Collector−Emitter Voltage VCEO 50 Vdc 1
Collector Current − Continuous IC 100 mAdc 1
Input Forward Voltage VIN(fwd) 30 Vdc 1
Input Reverse Voltage VIN(rev) 10 Vdc 1
Total Device Dissipation PD 202 mW TA = 25°C (Note 1) 3
Total Device Dissipation PD 310 mW TA = 25°C (Note 2) 3
Derate above 25°C PD 1.6 mW/°C Derate above 25°C (Note 1) 3
Derate above 25°C PD 2.5 mW/°C Derate above 25°C (Note 2) 3
Thermal Resistance, Junction to Ambient RJA 618 °C/W (Note 1) 3
Thermal Resistance, Junction to Ambient RJA 403 °C/W (Note 2) 3
Thermal Resistance, Junction to Lead RJL 280 °C/W (Note 1) 3
Thermal Resistance, Junction to Lead RJL 332 °C/W (Note 2) 3
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 3

CAD (KiCad official)

  • Symbol: SMUN5232T1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: smun5232t1g-etched.step / smun5232t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smun5232t1g.step / smun5232t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 2126d247ae9a907d, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF