component
SMUN5211DW
Public Made by Adomby adom
Slkor SLKORMICRO Elec Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SMUN5211DW
Slkor SLKORMICRO Elec · Digital Transistors · SOT-363
SMUN5211DW from Slkor SLKORMICRO Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of Q2 (R2 base-emitter resistor 10 kΩ connects here), per the internal schematic on page 1. |
| 2 | B2 | input | Base of Q2 via the 10 kΩ series base resistor R1, per the internal schematic on page 1. |
| 3 | C1 | passive | Collector of Q1; VCEO 50 Vdc, IC max 100 mAdc. |
| 4 | E1 | passive | Emitter of Q1 (R2 base-emitter resistor 10 kΩ connects here), per the internal schematic on page 1. |
| 5 | B1 | input | Base of Q1 via the 10 kΩ series base resistor R1, per the internal schematic on page 1. |
| 6 | C2 | passive | Collector of Q2; VCEO 50 Vdc, IC max 100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Resistor R1 | R1 | 7 | 10 | 13 | kΩ | 3 | |
| R1/R2 Resistor Ratio | R1/R2 | 0.8 | 1.2 | - | 3 | ||
| DC Current Gain | hFE | 35 | - | VCE = 10 V, IC = 5 mA | 2 | ||
| Collector Base Cutoff Current | ICBO | 100 | nA | VCB = 50 V | 2 | ||
| Collector Emitter Cutoff Current | ICEO | 500 | nA | VCE = 50 V | 2 | ||
| Emitter Base Cutoff Current | IEBO | 0.5 | mA | VEB = 6 V | 2 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 50 | V | IC = 10 µA | 2 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC = 2 mA | 2 | ||
| Collector Emitter Saturation Voltage | VCEsat | 0.25 | V | IC = 10 mA, IB = 0.3 mA | 2 | ||
| Output Voltage (on) | VOL | 0.2 | V | VCC = 5 V, VB = 2.5 V, RL = 1 kΩ | 3 | ||
| Output Voltage (off) | VOH | 4.9 | V | VCC = 5 V, VB = 0.5 V, RL = 1 kΩ | 3 | ||
| Collector-Base Voltage | VCBO | 50 | Vdc | TA = 25°C, common for Q1 and Q2 | 1 | ||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | TA = 25°C, common for Q1 and Q2 | 1 | ||
| Collector Current | IC | 100 | mAdc | TA = 25°C, common for Q1 and Q2 | 1 | ||
| Total Device Dissipation (one junction heated, FR-4 @ Minimum Pad) | PD | 187 | mW | TA = 25°C, Note 1 | 1 | ||
| Total Device Dissipation (one junction heated, FR-4 @ 1.0 x 1.0 inch Pad) | PD | 256 | mW | TA = 25°C, Note 2 | 1 | ||
| Thermal Resistance Junction-to-Ambient (one junction heated, FR-4 @ Minimum Pad) | RθJA | 670 | °C/W | Note 1 | 1 | ||
| Thermal Resistance Junction-to-Ambient (one junction heated, FR-4 @ 1.0 x 1.0 inch Pad) | RθJA | 490 | °C/W | Note 2 | 1 | ||
| Total Device Dissipation (both junctions heated, FR-4 @ Minimum Pad) | PD | 250 | mW | TA = 25°C, Note 1 | 1 | ||
| Total Device Dissipation (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | PD | 385 | mW | TA = 25°C, Note 2 | 1 | ||
| Derate above 25°C (both junctions heated, FR-4 @ Minimum Pad) | 2 | mW/°C | Above TA = 25°C, Note 1 | 1 | |||
| Derate above 25°C (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | 3 | mW/°C | Above TA = 25°C, Note 2 | 1 | |||
| Thermal Resistance Junction-to-Ambient (both junctions heated, FR-4 @ Minimum Pad) | RθJA | 493 | °C/W | Note 1 | 1 | ||
| Thermal Resistance Junction-to-Ambient (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | RθJA | 325 | °C/W | Note 2 | 1 | ||
| Thermal Resistance Junction-to-Lead (both junctions heated, FR-4 @ Minimum Pad) | RθJL | 188 | °C/W | Note 1 | 1 | ||
| Thermal Resistance Junction-to-Lead (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | RθJL | 208 | °C/W | Note 2 | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SMUN5211DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
smun5211dw-etched.step/smun5211dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smun5211dw.step/smun5211dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Slkor SLKORMICRO Elec datasheet (5 pp, sha256
058217b8b576c2c6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMUN5211DW
**Slkor SLKORMICRO Elec** · Digital Transistors · SOT-363
SMUN5211DW from Slkor SLKORMICRO Elec, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of Q2 (R2 base-emitter resistor 10 kΩ connects here), per the internal schematic on page 1. |
| 2 | B2 | input | Base of Q2 via the 10 kΩ series base resistor R1, per the internal schematic on page 1. |
| 3 | C1 | passive | Collector of Q1; VCEO 50 Vdc, IC max 100 mAdc. |
| 4 | E1 | passive | Emitter of Q1 (R2 base-emitter resistor 10 kΩ connects here), per the internal schematic on page 1. |
| 5 | B1 | input | Base of Q1 via the 10 kΩ series base resistor R1, per the internal schematic on page 1. |
| 6 | C2 | passive | Collector of Q2; VCEO 50 Vdc, IC max 100 mAdc. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Slkor SLKORMICRO Elec |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Resistor R1 | R1 | 7 | 10 | 13 | kΩ | | 3 |
| R1/R2 Resistor Ratio | R1/R2 | 0.8 | | 1.2 | - | | 3 |
| DC Current Gain | hFE | 35 | | | - | VCE = 10 V, IC = 5 mA | 2 |
| Collector Base Cutoff Current | ICBO | | | 100 | nA | VCB = 50 V | 2 |
| Collector Emitter Cutoff Current | ICEO | | | 500 | nA | VCE = 50 V | 2 |
| Emitter Base Cutoff Current | IEBO | | | 0.5 | mA | VEB = 6 V | 2 |
| Collector Base Breakdown Voltage | V(BR)CBO | 50 | | | V | IC = 10 µA | 2 |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 50 | | | V | IC = 2 mA | 2 |
| Collector Emitter Saturation Voltage | VCEsat | | | 0.25 | V | IC = 10 mA, IB = 0.3 mA | 2 |
| Output Voltage (on) | VOL | | | 0.2 | V | VCC = 5 V, VB = 2.5 V, RL = 1 kΩ | 3 |
| Output Voltage (off) | VOH | 4.9 | | | V | VCC = 5 V, VB = 0.5 V, RL = 1 kΩ | 3 |
| Collector-Base Voltage | VCBO | | | 50 | Vdc | TA = 25°C, common for Q1 and Q2 | 1 |
| Collector-Emitter Voltage | VCEO | | | 50 | Vdc | TA = 25°C, common for Q1 and Q2 | 1 |
| Collector Current | IC | | | 100 | mAdc | TA = 25°C, common for Q1 and Q2 | 1 |
| Total Device Dissipation (one junction heated, FR-4 @ Minimum Pad) | PD | | | 187 | mW | TA = 25°C, Note 1 | 1 |
| Total Device Dissipation (one junction heated, FR-4 @ 1.0 x 1.0 inch Pad) | PD | | | 256 | mW | TA = 25°C, Note 2 | 1 |
| Thermal Resistance Junction-to-Ambient (one junction heated, FR-4 @ Minimum Pad) | RθJA | | | 670 | °C/W | Note 1 | 1 |
| Thermal Resistance Junction-to-Ambient (one junction heated, FR-4 @ 1.0 x 1.0 inch Pad) | RθJA | | | 490 | °C/W | Note 2 | 1 |
| Total Device Dissipation (both junctions heated, FR-4 @ Minimum Pad) | PD | | | 250 | mW | TA = 25°C, Note 1 | 1 |
| Total Device Dissipation (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | PD | | | 385 | mW | TA = 25°C, Note 2 | 1 |
| Derate above 25°C (both junctions heated, FR-4 @ Minimum Pad) | | | | 2 | mW/°C | Above TA = 25°C, Note 1 | 1 |
| Derate above 25°C (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | | | | 3 | mW/°C | Above TA = 25°C, Note 2 | 1 |
| Thermal Resistance Junction-to-Ambient (both junctions heated, FR-4 @ Minimum Pad) | RθJA | | | 493 | °C/W | Note 1 | 1 |
| Thermal Resistance Junction-to-Ambient (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | RθJA | | | 325 | °C/W | Note 2 | 1 |
| Thermal Resistance Junction-to-Lead (both junctions heated, FR-4 @ Minimum Pad) | RθJL | | | 188 | °C/W | Note 1 | 1 |
| Thermal Resistance Junction-to-Lead (both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad) | RθJL | | | 208 | °C/W | Note 2 | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `SMUN5211DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `smun5211dw-etched.step` / `smun5211dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smun5211dw.step` / `smun5211dw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Slkor SLKORMICRO Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603133443953864704) (5 pp, sha256 `058217b8b576c2c6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smun5211dw-datasheet.pdf)