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SMMUN2233LT1G

Public Made by Adom

by adom

onsemi Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SMMUN2233LT1G

onsemi · Digital Transistors · SOT-23

SMMUN2233LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Input of the bias-resistor transistor, with input forward voltage limited to 30 Vdc and input reverse voltage limited to 5 Vdc, and an internal series base resistor R1 of 4.7 k (min 3.3 k, max 6.1 k).
2 EMITTER power_in Emitter, labeled GROUND in the datasheet, and the reference for the internal base-emitter resistor R2 (47 k in the part name R1 = 4.7 k, R2 = 47 k).
3 COLLECTOR output Output of the transistor, rated for a collector-emitter voltage VCEO of 50 Vdc and continuous collector current IC of 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 4
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 4
Emitter-Base Cutoff Current IEBO 0.18 mAdc VEB = 6.0 V, IC = 0 4
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0 4
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0 4
DC Current Gain hFE 80 200 IC = 5.0 mA, VCE = 10 V 4
Collector Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 1.0 mA 4
Input Voltage (off) Vi(off) 0.6 0.5 Vdc VCE = 5.0 V, IC = 100 A 4
Input Voltage (on) Vi(on) 1.3 0.9 Vdc VCE = 0.3 V, IC = 5 mA 4
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k 4
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k 4
Input Resistor R1 R1 3.3 4.7 6.1 k 4
Resistor Ratio R1/R2 0.08 0.1 0.12 4
Collector-Base Voltage VCBO 50 Vdc TA = 25°C 1
Collector-Emitter Voltage VCEO 50 Vdc TA = 25°C 1
Collector Current - Continuous IC 100 mAdc TA = 25°C 1
Input Forward Voltage VIN(fwd) 30 Vdc TA = 25°C 1
Input Reverse Voltage VIN(rev) 5 Vdc TA = 25°C 1
Total Device Dissipation (minimum pad) PD 246 mW TA = 25°C, FR-4 @ Minimum Pad (Note 1) 3
Total Device Dissipation (1.0 x 1.0 inch pad) PD 400 mW TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 3
Derate above 25°C (minimum pad) 2 mW/°C FR-4 @ Minimum Pad (Note 1) 3
Derate above 25°C (1.0 x 1.0 inch pad) 3.2 mW/°C FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 3
Thermal Resistance, Junction to Ambient (minimum pad) RJA 508 °C/W FR-4 @ Minimum Pad (Note 1) 3
Thermal Resistance, Junction to Ambient (1.0 x 1.0 inch pad) RJA 311 °C/W FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 3
Thermal Resistance, Junction to Lead (minimum pad) RJL 174 °C/W FR-4 @ Minimum Pad (Note 1) 3
Thermal Resistance, Junction to Lead (1.0 x 1.0 inch pad) RJL 208 °C/W FR-4 @ 1.0 x 1.0 Inch Pad (Note 2) 3
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 3

CAD (KiCad official)

  • Symbol: SMMUN2233LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmun2233lt1g-etched.step / smmun2233lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmun2233lt1g.step / smmun2233lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 cb68ecd71701d46c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF