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SMMUN2214LT1G

Public Made by Adom

by adom

onsemi Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SMMUN2214LT1G

onsemi · Digital Transistors · SOT-23

SMMUN2214LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base (input) of the NPN bias resistor transistor, connected through series resistor R1 = 10 kΩ (7.0-13 kΩ); input forward voltage max 40 Vdc and reverse voltage max 6 Vdc.
2 EMITTER power_in Emitter (ground) of the transistor, with R2 (base-emitter resistor) connected between base and emitter.
3 COLLECTOR output Collector (output) of the transistor; VCEO max 50 Vdc, VCBO max 50 Vdc, continuous collector current max 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 50 Vdc TA = 25°C 1
Collector-Emitter Voltage VCEO 50 Vdc TA = 25°C 1
Collector Current - Continuous IC 100 mAdc TA = 25°C 1
Input Forward Voltage VIN(fwd) 40 Vdc TA = 25°C 1
Input Reverse Voltage VIN(rev) 6 Vdc TA = 25°C 1
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 4
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 4
Emitter-Base Cutoff Current IEBO 0.2 mAdc VEB = 6.0 V, IC = 0 4
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 µA, IE = 0 4
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0 4
DC Current Gain hFE 80 140 IC = 5.0 mA, VCE = 10 V 4
Collector Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 0.3 mA 4
Input Voltage (off) Vi(off) 0.7 0.5 Vdc VCE = 5.0 V, IC = 100 µA 4
Input Voltage (on) Vi(on) 1.4 0.8 Vdc VCE = 0.3 V, IC = 1.0 mA 4
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ 4
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ 4
Input Resistor R1 7 10 13 kΩ 4
Resistor Ratio R1/R2 0.17 0.21 0.25 4
Total Device Dissipation (minimum pad) PD 246 mW SOT-23, TA = 25°C, FR-4 @ Minimum Pad 3
Total Device Dissipation (1.0 x 1.0 inch pad) PD 400 mW SOT-23, TA = 25°C, FR-4 @ 1.0 x 1.0 Inch Pad 3
Derating above 25°C (minimum pad) 2 mW/°C SOT-23, FR-4 @ Minimum Pad 3
Derating above 25°C (1.0 x 1.0 inch pad) 3.2 mW/°C SOT-23, FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Ambient (minimum pad) RθJA 508 °C/W SOT-23, FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Ambient (1.0 x 1.0 inch pad) RθJA 311 °C/W SOT-23, FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Lead (minimum pad) RθJL 174 °C/W SOT-23, FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Lead (1.0 x 1.0 inch pad) RθJL 208 °C/W SOT-23, FR-4 @ 1.0 x 1.0 Inch Pad 3
Junction and Storage Temperature Range TJ, Tstg -55 150 °C SOT-23 3

CAD (KiCad official)

  • Symbol: SMMUN2214LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmun2214lt1g-etched.step / smmun2214lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmun2214lt1g.step / smmun2214lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 70bc6a2635a99046, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF