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Contents

README

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SMMUN2213LT1G

onsemi · Digital Transistors · SOT-23

SMMUN2213LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the bias-resistor NPN transistor, the input node with a 47 kΩ base resistor, where the datasheet limits input forward voltage to 40 Vdc and input reverse voltage to 10 Vdc.
2 EMITTER power_in Emitter of the transistor, labeled EMITTER (GROUND) and used as the common ground reference, with no separate pin-specific rating given in the datasheet.
3 COLLECTOR output Collector of the transistor, labeled COLLECTOR (OUTPUT), rated for 50 Vdc collector-emitter voltage (VCEO) and 100 mAdc continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 4
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 4
Emitter-Base Cutoff Current IEBO 0.1 mAdc VEB = 6.0 V, IC = 0 4
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 A, IE = 0 4
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0; pulsed, PW 300 msec, duty cycle <= 2% (Note 5) 4
DC Current Gain hFE 80 140 IC = 5.0 mA, VCE = 10 V; pulsed, PW 300 msec, duty cycle <= 2% (Note 5) 4
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 0.3 mA; pulsed, PW 300 msec, duty cycle <= 2% (Note 5) 4
Input Voltage (off) Vi(off) 1.2 0.8 Vdc VCE = 5.0 V, IC = 100 A 4
Input Voltage (on) Vi(on) 3 1.6 Vdc VCE = 0.3 V, IC = 2.0 mA 4
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k 4
Output Voltage (off) VOH 4.9 Vdc VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k 4
Input Resistor R1 R1 32.9 47 61.1 k 4
Resistor Ratio R1/R2 R1/R2 0.8 1 1.2 4
Collector-Base Voltage VCBO 50 Vdc 1
Collector-Emitter Voltage VCEO 50 Vdc 1
Collector Current - Continuous IC 100 mAdc 1
Input Forward Voltage VIN(fwd) 40 Vdc 1
Input Reverse Voltage VIN(rev) 10 Vdc 1
Total Device Dissipation PD 246 mW TA = 25°C, Note 1: FR-4 @ Minimum Pad 3
Total Device Dissipation PD 400 mW TA = 25°C, Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 3
Derate above 25°C 2 mW/°C Note 1: FR-4 @ Minimum Pad 3
Derate above 25°C 3.2 mW/°C Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Ambient RJA 508 °C/W Note 1: FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Ambient RJA 311 °C/W Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 3
Thermal Resistance, Junction to Lead RJL 174 °C/W Note 1: FR-4 @ Minimum Pad 3
Thermal Resistance, Junction to Lead RJL 208 °C/W Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 3
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 3

CAD (KiCad official)

  • Symbol: SMMUN2213LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmun2213lt1g-etched.step / smmun2213lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmun2213lt1g.step / smmun2213lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (13 pp, sha256 5c75bf82080bd8db, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF