# SMMBTA56LT3G-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

SMMBTA56LT3G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base voltage limit VEBO is -4 V and IEBO is -0.1 µA at VEB=-4 V. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage limit VEBO is -4 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; limits are VCBO -80 V, VCEO -80 V and IC -500 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO |  |  | -80 | V | Ta=25°C | 1 |
| Collector-base voltage | VCBO |  |  | -80 | V | Ta=25°C | 1 |
| Emitter-base voltage | VEBO |  |  | -4 | V | Ta=25°C | 1 |
| Collector current | IC |  |  | -500 | mA | Ta=25°C | 1 |
| Collector power dissipation | PC |  |  | 225 | mW | Ta=25°C | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance from junction to ambient | RΘJA |  |  | 555 | /W ℃ |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | -80 |  |  | V | IC=-100µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -80 |  |  | V | IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -4 |  |  | V | IE=-100µA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | -0.1 | µA | VCB=-80V, IE=0 | 1 |
| Collector cut-off current | ICEO |  |  | -1 | µA | VCE=-60V, IB=0 | 1 |
| Emitter-base breakdown voltage (IEBO row, printed label) | IEBO |  |  | -0.1 | µA | VEB=-4V, IC=0 | 1 |
| DC current gain | hFE(1) | 100 |  | 400 |  | VCE=-1V, IC=-10mA | 1 |
| DC current gain | hFE(2) | 100 |  |  |  | VCE=-1V, IC=-100mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.25 | V | IC=-100mA, IB=-10mA | 1 |
| Base-emitter voltage | VBE |  |  | -1.2 | V | VCE=-1V, IC=-100mA | 1 |
| Transition frequency | fT | 50 |  |  | MHz | VCE=-1V, IC=-100mA, f=100MHz | 1 |

## CAD (KiCad official)

- Symbol: `SMMBTA56LT3G-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `smmbta56lt3g-hxy-etched.step` / `smmbta56lt3g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smmbta56lt3g-hxy.step` / `smmbta56lt3g-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604445011736084480) (4 pp, sha256 `da2e1a241c34330d`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smmbta56lt3g-hxy-datasheet.pdf)