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SMMBT5551LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 29d ago
viewers smmbt5551lt1g: viewers · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json smmbt5551lt1g: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 24d ago
README.md smmbt5551lt1g: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 24d ago
smmbt5551lt1g-etched.glb smmbt5551lt1g: factory component page (tier=mfr) · Ray 29d ago
smmbt5551lt1g-etched.step smmbt5551lt1g: factory component page (tier=mfr) · Ray 29d ago
smmbt5551lt1g-hero.glb smmbt5551lt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
smmbt5551lt1g-hero.overlay.json Publish 0.1.0 · Ray 29d ago
smmbt5551lt1g.glb Publish 0.1.0 · Ray 29d ago
smmbt5551lt1g.kicad_mod Publish 0.1.0 · Ray 29d ago
smmbt5551lt1g.kicad_sym Publish 0.1.0 · Ray 29d ago
smmbt5551lt1g.lbr Publish 0.1.0 · Ray 29d ago
smmbt5551lt1g.step Publish 0.1.0 · Ray 29d ago

SMMBT5551LT1G

onsemi · Bipolar (BJT) · SOT-23

SMMBT5551LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, only device ratings of VEBO 6.0 Vdc and continuous IC 600 mAdc.
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is a minimum of 6.0 Vdc and the device is rated for 600 mAdc continuous collector current.
3 COLLECTOR passive Collector terminal of the NPN transistor; MMBT5551 is rated for VCEO 160 Vdc and VCBO 180 Vdc, with continuous IC of 600 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (MMBT5551) V(BR)CEO 160 Vdc IC = 1.0 mAdc, IB = 0 2
Collector-Base Breakdown Voltage (MMBT5551) V(BR)CBO 180 Vdc IC = 100 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 Vdc IE = 10 Adc, IC = 0 2
DC Current Gain (MMBT5551) hFE 80 IC = 1.0 mAdc, VCE = 5.0 Vdc 2
DC Current Gain (MMBT5551) hFE 80 250 IC = 10 mAdc, VCE = 5.0 Vdc 2
DC Current Gain (MMBT5551) hFE 30 IC = 50 mAdc, VCE = 5.0 Vdc 2
Collector-Emitter Saturation Voltage (both types) VCE(sat) 0.15 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Collector-Emitter Saturation Voltage (MMBT5551) VCE(sat) 0.2 Vdc IC = 50 mAdc, IB = 5.0 mAdc 2
Base-Emitter Saturation Voltage (both types) VBE(sat) 1 Vdc IC = 10 mAdc, IB = 1.0 mAdc 2
Base-Emitter Saturation Voltage (MMBT5551) VBE(sat) 1 Vdc IC = 50 mAdc, IB = 5.0 mAdc 2
Collector Cutoff Current (MMBT5551) ICBO 50 nAdc VCB = 120 Vdc, IE = 0 2
Collector Cutoff Current (MMBT5551, high temperature) ICBO 50 Adc VCB = 120 Vdc, IE = 0, TA = 100°C 2
Emitter Cutoff Current IEBO 50 nAdc VEB = 4.0 Vdc, IC = 0 2
Collector Emitter Cut-off Current (both types) ICES 50 nA VCB = 10 V 2
Collector Emitter Cut-off Current ICES 100 nA VCB = 75 V 2
Collector-Emitter Voltage (MMBT5551) VCEO 160 Vdc 1
Collector-Base Voltage (MMBT5551) VCBO 180 Vdc 1
Emitter-Base Voltage VEBO 6 Vdc 1
Collector Current - Continuous IC 600 mAdc 1
Electrostatic Discharge, Human Body Model ESD 8000 V Human Body Model, printed as > 8000 V 1
Electrostatic Discharge, Machine Model ESD 400 V Machine Model, printed as > 400 V 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C, FR-5 board (Note 1) 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RθJA 556 °C/W FR-5 board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, alumina substrate (Note 2) 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RθJA 417 °C/W alumina substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: SMMBT5551LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmbt5551lt1g-etched.step / smmbt5551lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmbt5551lt1g.step / smmbt5551lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 9f5d518b3ce13e1f, retrieved 2026-10-09, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF