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SMMBT4403LT1G-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SMMBT4403LT1G-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

SMMBT4403LT1G-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet drawing labels it B and gives VEBO of -5 V.
2 E passive Emitter of the PNP transistor; the datasheet drawing labels it E and gives VEBO of -5 V.
3 C passive Collector of the PNP transistor, rated IC of -600 mA, VCBO of -40 V and VCEO of -40 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -40 V IC=-100μA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -40 V IC=-1mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100μA ,IC=0 2
Collector cut-off current ICBO -0.1 μA VCB=-35V,IE=0 2
Emitter cut-off current IEBO -0.1 μA VEB=-4V,IC=0 2
DC current gain hFE1 30 VCE=-1V, IC=-0.1mA 2
DC current gain hFE2 60 VCE=-1V, IC=-1mA 2
DC current gain hFE3 100 VCE=-1V, IC=-10mA 2
DC current gain hFE4 100 300 VCE=-2V, IC=-150mA 2
DC current gain hFE5 20 VCE=-2V, IC=-500mA 2
Collector-emitter saturation voltage VCE(sat) -0.4 V IC=-150mA,IB=-15mA 2
Collector-emitter saturation voltage VCE(sat) -0.75 V IC=-500mA,IB=-50mA 2
Base-emitter saturation voltage VBE(sat) -0.95 V IC=-150mA,IB=-15mA 2
Base-emitter saturation voltage VBE(sat) -1.3 V IC=-500mA,IB=-50mA 2
Transition frequency fT 200 MHz VCE=-10V, IC=-20mA,f =100MHz 2
Delay time td 15 ns VCC=-30V, VBE(off)=-0.5V; IC=-150mA, IB1=-15mA 2
Rise time tr 20 ns 2
Storage time ts 225 ns VCC=-30V, IC=-150mA; IB1=IB2=-15mA 2
Fall time tf 60 ns 2
Collector-Base Voltage VCBO -40 V 1
Collector-Emitter Voltage VCEO -40 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current IC -600 mA 1
Collector Power Dissipation PC 300 mW 1
Thermal Resistance From Junction To Ambient RΘJA 417 ℃/W 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: SMMBT4403LT1G-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmbt4403lt1g-hxy-etched.step / smmbt4403lt1g-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmbt4403lt1g-hxy.step / smmbt4403lt1g-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 3d042b000066849d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF