component
SMMBT4401LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
SMMBT4401LT1G
onsemi · Bipolar (BJT) · SOT-23
SMMBT4401LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN switching transistor; the datasheet rates the emitter-base voltage VEBO at 6.0 Vdc maximum. |
| 2 | EMITTER | passive | Emitter terminal of the NPN switching transistor; the datasheet rates the emitter-base voltage VEBO at 6.0 Vdc maximum. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN switching transistor; rated for VCEO 40 Vdc, VCBO 60 Vdc, and continuous collector current 600 mAdc (900 mAdc peak). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | Vdc | IC = 1.0 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | Vdc | IC = 0.1 mAdc, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | Vdc | IE = 0.1 mAdc, IC = 0 | 2 | ||
| Base Cutoff Current | IBEV | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 | ||
| Collector Cutoff Current | ICEX | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 | ||
| DC Current Gain | hFE | 20 | IC = 0.1 mAdc, VCE = 1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 40 | IC = 1.0 mAdc, VCE = 1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 80 | IC = 10 mAdc, VCE = 1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 100 | 300 | IC = 150 mAdc, VCE = 1.0 Vdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.75 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | 0.95 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 | ||
| Current-Gain-Bandwidth Product | fT | 250 | MHz | IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz | 2 | ||
| Collector-Base Capacitance | Ccb | 6.5 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz | 2 | ||
| Emitter-Base Capacitance | Ceb | 30 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Input Impedance | hie | 1 | 15 | k | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Voltage Feedback Ratio | hre | 0.1 | 8 | X 10−4 | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Small-Signal Current Gain | hfe | 40 | 500 | − | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Output Admittance | hoe | 1 | 30 | mhos | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 | |
| Delay Time | td | 15 | ns | VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc | 2 | ||
| Rise Time | tr | 20 | ns | 2 | |||
| Storage Time | ts | 225 | ns | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc | 2 | ||
| Fall Time | tf | 30 | ns | 2 | |||
| Collector-Emitter Voltage | VCEO | 40 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | 60 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | Vdc | 1 | |||
| Collector Current - Continuous | IC | 600 | mAdc | 1 | |||
| Collector Current - Peak | ICM | 900 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | FR-5 Board (Note 1) @TA = 25°C | 1 | ||
| Derate above 25°C, FR-5 Board | PD | 1.8 | mW/°C | 1 | |||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA | 556 | °C/W | FR-5 Board (Note 1) | 1 | ||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | Alumina Substrate (Note 2) @TA = 25°C | 1 | ||
| Derate above 25°C, Alumina Substrate | PD | 2.4 | mW/°C | 1 | |||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
SMMBT4401LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
smmbt4401lt1g-etched.step/smmbt4401lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smmbt4401lt1g.step/smmbt4401lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
fcf3a37017eb9375, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMMBT4401LT1G
**onsemi** · Bipolar (BJT) · SOT-23
SMMBT4401LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN switching transistor; the datasheet rates the emitter-base voltage VEBO at 6.0 Vdc maximum. |
| 2 | EMITTER | passive | Emitter terminal of the NPN switching transistor; the datasheet rates the emitter-base voltage VEBO at 6.0 Vdc maximum. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN switching transistor; rated for VCEO 40 Vdc, VCBO 60 Vdc, and continuous collector current 600 mAdc (900 mAdc peak). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | | | Vdc | IC = 1.0 mAdc, IB = 0 | 2 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | | | Vdc | IC = 0.1 mAdc, IE = 0 | 2 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | | | Vdc | IE = 0.1 mAdc, IC = 0 | 2 |
| Base Cutoff Current | IBEV | | | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 |
| Collector Cutoff Current | ICEX | | | 0.1 | Adc | VCE = 35 Vdc, VEB = 0.4 Vdc | 2 |
| DC Current Gain | hFE | 20 | | | | IC = 0.1 mAdc, VCE = 1.0 Vdc | 2 |
| DC Current Gain | hFE | 40 | | | | IC = 1.0 mAdc, VCE = 1.0 Vdc | 2 |
| DC Current Gain | hFE | 80 | | | | IC = 10 mAdc, VCE = 1.0 Vdc | 2 |
| DC Current Gain | hFE | 100 | | 300 | | IC = 150 mAdc, VCE = 1.0 Vdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.4 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.75 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.75 | | 0.95 | Vdc | IC = 150 mAdc, IB = 15 mAdc | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 1.2 | Vdc | IC = 500 mAdc, IB = 50 mAdc | 2 |
| Current-Gain-Bandwidth Product | fT | 250 | | | MHz | IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz | 2 |
| Collector-Base Capacitance | Ccb | | | 6.5 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz | 2 |
| Emitter-Base Capacitance | Ceb | | | 30 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 2 |
| Input Impedance | hie | 1 | | 15 | k | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 |
| Voltage Feedback Ratio | hre | 0.1 | | 8 | X 10−4 | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 |
| Small-Signal Current Gain | hfe | 40 | | 500 | − | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 |
| Output Admittance | hoe | 1 | | 30 | mhos | IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz | 2 |
| Delay Time | td | | | 15 | ns | VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc | 2 |
| Rise Time | tr | | | 20 | ns | | 2 |
| Storage Time | ts | | | 225 | ns | VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc | 2 |
| Fall Time | tf | | | 30 | ns | | 2 |
| Collector-Emitter Voltage | VCEO | | | 40 | Vdc | | 1 |
| Collector-Base Voltage | VCBO | | | 60 | Vdc | | 1 |
| Emitter-Base Voltage | VEBO | | | 6 | Vdc | | 1 |
| Collector Current - Continuous | IC | | | 600 | mAdc | | 1 |
| Collector Current - Peak | ICM | | | 900 | mAdc | | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Total Device Dissipation, FR-5 Board | PD | | | 225 | mW | FR-5 Board (Note 1) @TA = 25°C | 1 |
| Derate above 25°C, FR-5 Board | PD | | | 1.8 | mW/°C | | 1 |
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA | | | 556 | °C/W | FR-5 Board (Note 1) | 1 |
| Total Device Dissipation, Alumina Substrate | PD | | | 300 | mW | Alumina Substrate (Note 2) @TA = 25°C | 1 |
| Derate above 25°C, Alumina Substrate | PD | | | 2.4 | mW/°C | | 1 |
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA | | | 417 | °C/W | Alumina Substrate (Note 2) | 1 |
## CAD (KiCad official)
- Symbol: `SMMBT4401LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `smmbt4401lt1g-etched.step` / `smmbt4401lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smmbt4401lt1g.step` / `smmbt4401lt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884492983001088) (8 pp, sha256 `fcf3a37017eb9375`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smmbt4401lt1g-datasheet.pdf)