component
SMMBT3906LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| smmbt3906lt1g-etched.glb | 7d ago |
| smmbt3906lt1g-etched.step | 7d ago |
| smmbt3906lt1g-hero.glb | 7d ago |
| smmbt3906lt1g-hero.overlay.json | 7d ago |
| smmbt3906lt1g.glb | 7d ago |
| smmbt3906lt1g.kicad_mod | 7d ago |
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| smmbt3906lt1g.lbr | 7d ago |
| smmbt3906lt1g.step | 7d ago |
SMMBT3906LT1G
onsemi · Bipolar (BJT) · SOT-23
SMMBT3906LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP general-purpose transistor; the device is rated for emitter-base voltage VEBO of -5.0 Vdc. |
| 2 | EMITTER | passive | Emitter terminal of the PNP general-purpose transistor; the device is rated for collector-emitter voltage VCEO of -40 Vdc and continuous collector current IC of -200 mAdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP general-purpose transistor; the device is rated for collector-base voltage VCBO of -40 Vdc and peak collector current ICM of -800 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | Vdc | IC = -1.0 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | Vdc | IC = -10 Adc, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -10 Adc, IC = 0 | 2 | ||
| Base Cutoff Current | IBL | -50 | nAdc | VCE = -30 Vdc, VEB = -3.0 Vdc | 2 | ||
| Collector Cutoff Current | ICEX | -50 | nAdc | VCE = -30 Vdc, VEB = -3.0 Vdc | 2 | ||
| DC Current Gain | HFE | 60 | - | IC = -0.1 mAdc, VCE = -1.0 Vdc | 2 | ||
| DC Current Gain | HFE | 80 | - | IC = -1.0 mAdc, VCE = -1.0 Vdc | 2 | ||
| DC Current Gain | HFE | 100 | 300 | - | IC = -10 mAdc, VCE = -1.0 Vdc | 2 | |
| DC Current Gain | HFE | 30 | - | IC = -100 mAdc, VCE = -1.0 Vdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | Vdc | IC = -10 mAdc, IB = -1.0 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | IC = -50 mAdc, IB = -5.0 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -0.65 | -0.85 | Vdc | IC = -10 mAdc, IB = -1.0 mAdc | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.95 | Vdc | IC = -50 mAdc, IB = -5.0 mAdc | 2 | ||
| Current-Gain - Bandwidth Product | fT | 250 | MHz | IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz | 2 | ||
| Output Capacitance | Cobo | 4.5 | pF | VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz | 2 | ||
| Input Capacitance | Cibo | 10 | pF | VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Input Impedance | hie | 2 | 12 | k | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 2 | |
| Voltage Feedback Ratio | hre | 0.1 | 10 | X 10-4 | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 2 | |
| Small-Signal Current Gain | hfe | 100 | 400 | - | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 2 | |
| Output Admittance | hoe | 3 | 60 | mhos | IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz | 2 | |
| Noise Figure | NF | 4 | dB | IC = -100 Adc, VCE = -5.0 Vdc, RS = 1.0 k, f = 1.0 kHz | 2 | ||
| Delay Time | td | 35 | ns | VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc | 2 | ||
| Rise Time | tr | 35 | ns | 2 | |||
| Storage Time | ts | 225 | ns | VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc | 2 | ||
| Fall Time | tf | 75 | ns | 2 | |||
| Collector Current - Continuous | IC | -200 | mAdc | 1 | |||
| Collector Current - Peak | ICM | -800 | mAdc | Note 3 (reference SOA curve) | 1 | ||
| Collector-Emitter Voltage | VCEO | -40 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | -40 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -65 | 150 | °C | 1 | ||
| Total Device Dissipation | PD | 225 | mW | FR-5 Board (Note 1) @ TA = 25°C | 1 | ||
| Total Device Dissipation | PD | 300 | mW | Alumina Substrate (Note 2) @ TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | °C/W | FR-5 Board (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
SMMBT3906LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
smmbt3906lt1g-etched.step/smmbt3906lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smmbt3906lt1g.step/smmbt3906lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
d6ed93dca61d330e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).