component
SMMBT3904LT3G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| smmbt3904lt3g-etched.glb | 16d ago |
| smmbt3904lt3g-etched.step | 16d ago |
| smmbt3904lt3g-hero.glb | 16d ago |
| smmbt3904lt3g-hero.overlay.json | 16d ago |
| smmbt3904lt3g.glb | 16d ago |
| smmbt3904lt3g.kicad_mod | 16d ago |
| smmbt3904lt3g.kicad_sym | 16d ago |
| smmbt3904lt3g.lbr | 16d ago |
| smmbt3904lt3g.step | 16d ago |
SMMBT3904LT3G
onsemi · Bipolar (BJT) · SOT-23
SMMBT3904LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN general-purpose transistor; the maximum emitter-base voltage rating VEBO is 6.0 Vdc. |
| 2 | EMITTER | passive | Emitter terminal of the NPN general-purpose transistor; the maximum emitter-base voltage rating VEBO is 6.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN general-purpose transistor; the maximum collector-emitter voltage VCEO is 40 Vdc and continuous collector current IC is 200 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc | 2 | |||
| Collector-Base Voltage | VCBO | 60 | Vdc | 2 | |||
| Emitter-Base Voltage | VEBO | 6 | Vdc | 2 | |||
| Collector Current - Continuous | IC | 200 | mAdc | 2 | |||
| Collector Current - Peak | ICM | 900 | mAdc | Note 3: reference SOA curve | 2 | ||
| Total Device Dissipation FR-5 Board | PD | 225 | mW | FR-5 board (Note 1) @ TA = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA | 556 | °C/W | FR-5 board (Note 1) | 2 | ||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | Alumina substrate (Note 2) @ TA = 25°C | 2 | ||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA | 417 | °C/W | Alumina substrate (Note 2) | 2 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | Vdc | IC = 1.0 mAdc, IB = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | Vdc | IC = 10 Adc, IE = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | Vdc | IE = 10 Adc, IC = 0 | 3 | ||
| Base Cutoff Current | IBL | 50 | nAdc | VCE = 30 Vdc, VEB = 3.0 Vdc | 3 | ||
| Collector Cutoff Current | ICEX | 50 | nAdc | VCE = 30 Vdc, VEB = 3.0 Vdc | 3 | ||
| DC Current Gain | HFE | 40 | - | IC = 0.1 mAdc, VCE = 1.0 Vdc | 3 | ||
| DC Current Gain | HFE | 70 | - | IC = 1.0 mAdc, VCE = 1.0 Vdc | 3 | ||
| DC Current Gain | HFE | 100 | 300 | - | IC = 10 mAdc, VCE = 1.0 Vdc | 3 | |
| DC Current Gain | HFE | 60 | - | IC = 50 mAdc, VCE = 1.0 Vdc | 3 | ||
| DC Current Gain | HFE | 30 | - | IC = 100 mAdc, VCE = 1.0 Vdc | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | Vdc | IC = 10 mAdc, IB = 1.0 mAdc | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | Vdc | IC = 50 mAdc, IB = 5.0 mAdc | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.65 | 0.85 | Vdc | IC = 10 mAdc, IB = 1.0 mAdc | 3 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.95 | Vdc | IC = 50 mAdc, IB = 5.0 mAdc | 3 | ||
| Current-Gain Bandwidth Product | fT | 300 | MHz | IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz | 3 | ||
| Output Capacitance | Cobo | 4 | pF | VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz | 3 | ||
| Input Capacitance | Cibo | 8 | pF | VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | 3 | ||
| Input Impedance | hie | 1 | 10 | k | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 3 | |
| Voltage Feedback Ratio | hre | 0.5 | 8 | X 10-4 | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 3 | |
| Small-Signal Current Gain | hfe | 100 | 400 | - | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 3 | |
| Output Admittance | hoe | 1 | 40 | mhos | VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz | 3 | |
| Noise Figure | NF | 5 | dB | VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k ohms, f = 1.0 kHz | 3 | ||
| Delay Time | td | 35 | ns | VCC = 3.0 Vdc, VBE = -0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc | 3 | ||
| Rise Time | tr | 35 | ns | 3 | |||
| Storage Time | ts | 200 | ns | VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc | 3 | ||
| Fall Time | tf | 50 | ns | 3 |
CAD (KiCad official)
- Symbol:
SMMBT3904LT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
smmbt3904lt3g-etched.step/smmbt3904lt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smmbt3904lt3g.step/smmbt3904lt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
0ab2b165d41d9a01, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).