component
SMMBT2907ALT3G
Public Made by Adomby adom
onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 12d ago |
| viewers | 12d ago |
| package.json | 12d ago |
| page.json | 12d ago |
| README.md | 12d ago |
| smmbt2907alt3g-etched.glb | 12d ago |
| smmbt2907alt3g-etched.step | 12d ago |
| smmbt2907alt3g-hero.glb | 12d ago |
| smmbt2907alt3g-hero.overlay.json | 12d ago |
| smmbt2907alt3g.glb | 12d ago |
| smmbt2907alt3g.kicad_mod | 12d ago |
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| smmbt2907alt3g.lbr | 12d ago |
| smmbt2907alt3g.step | 12d ago |
SMMBT2907ALT3G
onsemi · Bipolar Transistors - BJT · SOT-23
SMMBT2907ALT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base of the PNP transistor; the SOT-23 STYLE 6 pinout assigns pin 1 to base, with VEBO limited to -5.0 Vdc. |
| 2 | EMITTER | passive | Emitter of the PNP transistor (SOT-23 STYLE 6 pin 2), with emitter-base voltage rated -5.0 Vdc maximum. |
| 3 | COLLECTOR | passive | Collector of the PNP transistor (SOT-23 STYLE 6 pin 3), rated VCEO -60 Vdc, VCBO -60 Vdc and IC -600 mAdc continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc | 1 | |||
| Collector-Base Voltage | VCBO | -60 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current - Continuous | IC | -600 | mAdc | 1 | |||
| Collector Current - Peak | ICM | -1200 | mAdc | Note 3 | 1 | ||
| Total Device Dissipation FR-5 | PD | 225 | mW | FR-5 board, TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (FR-5) | RθJA | 556 | °C/W | FR-5 board | 1 | ||
| Total Device Dissipation Alumina | PD | 300 | mW | Alumina substrate, TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Alumina) | RθJA | 417 | °C/W | Alumina substrate | 1 | ||
| Total Device Dissipation Heat Spreader | PD | 350 | mW | Heat spreader, TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Heat Spreader) | RθJA | 357 | °C/W | Heat spreader | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | Vdc | IC = -1.0 mAdc / -10 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | Vdc | IC = -10 µAdc, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -10 µAdc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICEX | -50 | nAdc | VCE = -30 Vdc, VEB(off) = -0.5 Vdc | 2 | ||
| Collector Cutoff Current | ICBO | -0.01 | µAdc | VCB = -50 Vdc, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | -10 | µAdc | VCB = -50 Vdc, IE = 0, TA = 125°C | 2 | ||
| Base Cutoff Current | IBL | -50 | nAdc | VCE = -30 Vdc, VEB(off) = -0.5 Vdc | 2 | ||
| DC Current Gain | hFE | 75 | IC = -0.1 mAdc, VCE = -10 Vdc | 2 | |||
| DC Current Gain | hFE | 100 | IC = -1.0 mAdc, VCE = -10 Vdc | 2 | |||
| DC Current Gain | hFE | 100 | 300 | IC = -150 mAdc, VCE = -10 Vdc | 2 | ||
| DC Current Gain | hFE | 50 | IC = -500 mAdc, VCE = -10 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -1.6 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -2.6 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Current-Gain Bandwidth Product | fT | 200 | MHz | IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz | 2 | ||
| Output Capacitance | Cobo | 8 | pF | VCB = -10 Vdc, IE = 0, f = 1.0 MHz | 2 | ||
| Input Capacitance | Cibo | 30 | pF | VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz | 2 | ||
| Turn-On Time | ton | 45 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 2 | ||
| Delay Time | td | 10 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 2 | ||
| Rise Time | tr | 40 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 2 | ||
| Turn-Off Time | toff | 100 | ns | VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc | 2 | ||
| Storage Time | ts | 80 | ns | VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc | 2 | ||
| Fall Time | tf | 30 | ns | VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc | 2 |
CAD (KiCad official)
- Symbol:
SMMBT2907ALT3G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
smmbt2907alt3g-etched.step/smmbt2907alt3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smmbt2907alt3g.step/smmbt2907alt3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
e11833e0d964b1ea, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).