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SMMBT2907ALT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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viewers smmbt2907alt1g: viewers · Ray 28d ago
package.json Publish 0.1.0 · Ray 28d ago
page.json smmbt2907alt1g: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 24d ago
README.md smmbt2907alt1g: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 24d ago
smmbt2907alt1g-etched.glb smmbt2907alt1g: factory component page (tier=lcsc) · Ray 28d ago
smmbt2907alt1g-etched.step smmbt2907alt1g: factory component page (tier=lcsc) · Ray 28d ago
smmbt2907alt1g-hero.glb smmbt2907alt1g: hero GLB from the etched model (keeps the MPN mark) · Ray 28d ago
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smmbt2907alt1g.glb Publish 0.1.0 · Ray 28d ago
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smmbt2907alt1g.step Publish 0.1.0 · Ray 28d ago

SMMBT2907ALT1G

onsemi · Bipolar (BJT) · SOT-23

SMMBT2907ALT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives VBE(sat) of −1.3 V max at IC −150 mA / IB −15 mA and −2.6 V max at IC −500 mA / IB −50 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is −5.0 V minimum at IE = −10 µA.
3 COLLECTOR passive Collector terminal of the PNP transistor; the device is rated for VCEO −60 V, continuous collector current −600 mA and peak collector current −1200 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector−Emitter Voltage VCEO -60 Vdc 1
Collector−Base Voltage VCBO -60 Vdc 1
Emitter−Base Voltage VEBO -5 Vdc 1
Collector Current − Continuous IC -600 mAdc 1
Collector Current − Peak ICM -1200 mAdc Note 3 1
Total Device Dissipation − FR−5 Board PD 225 mW Note 1, @TA = 25°C 1
Thermal Resistance, Junction−to−Ambient (FR−5 Board) RθJA 556 °C/W Note 1 1
Total Device Dissipation − Alumina Substrate PD 300 mW Note 2, @TA = 25°C 1
Thermal Resistance, Junction−to−Ambient (Alumina Substrate) RθJA 417 °C/W Note 2 1
Total Device Dissipation − Heat Spreader PD 350 mW Note 4, @TA = 25°C 1
Thermal Resistance, Junction−to−Ambient (Heat Spreader) RθJA 357 °C/W Note 4 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Collector−Emitter Breakdown Voltage V(BR)CEO -60 Vdc IC = −1.0 mAdc, IB = 0 2
Collector−Base Breakdown Voltage V(BR)CBO -60 Vdc IC = −10 Adc, IE = 0 2
Emitter−Base Breakdown Voltage V(BR)EBO -5 Vdc IE = −10 Adc, IC = 0 2
Collector Cutoff Current ICEX -50 nAdc VCE = −30 Vdc, VEB(off) = −0.5 Vdc 2
Collector Cutoff Current ICBO -0.01 Adc VCB = −50 Vdc, IE = 0 2
Collector Cutoff Current ICBO -10 Adc VCB = −50 Vdc, IE = 0, TA = 125°C 2
Base Cutoff Current IBL -50 nAdc VCE = −30 Vdc, VEB(off) = −0.5 Vdc 2
DC Current Gain hFE 75 IC = −0.1 mAdc, VCE = −10 Vdc 2
DC Current Gain hFE 100 IC = −1.0 mAdc, VCE = −10 Vdc 2
DC Current Gain hFE 50 IC = −500 mAdc, VCE = −10 Vdc (Note 5) 2
DC Current Gain (single printed maximum) hFE 300 2
Collector−Emitter Saturation Voltage VCE(sat) -0.4 Vdc IC = −150 mAdc, IB = −15 mAdc (Note 5) 2
Collector−Emitter Saturation Voltage VCE(sat) -1.6 Vdc IC = −500 mAdc, IB = −50 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) -1.3 Vdc IC = −150 mAdc, IB = −15 mAdc 2
Base−Emitter Saturation Voltage VBE(sat) -2.6 Vdc IC = −500 mAdc, IB = −50 mAdc 2
Current−Gain − Bandwidth Product fT 200 MHz IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz (Notes 5, 6) 2
Output Capacitance Cobo 8 pF VCB = −10 Vdc, IE = 0, f = 1.0 MHz 2
Input Capacitance Cibo 30 VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz 2
Turn−On Time ton 45 ns VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc 2
Delay Time td 10 ns 2
Rise Time tr 40 ns 2
Turn−Off Time toff 100 ns VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc 2
Storage Time ts 80 ns 2
Fall Time tf 30 ns 2

CAD (KiCad official)

  • Symbol: SMMBT2907ALT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmbt2907alt1g-etched.step / smmbt2907alt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmbt2907alt1g.step / smmbt2907alt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 45633963f9187ad2, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF