SMMBD914LT1G

onsemi · Switching Diodes · SOT-23

SMMBD914LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	ANODE	passive	Diode anode terminal (STYLE 8, pin 1 ANODE); the device is rated for 100 Vdc reverse voltage and 200 mAdc forward current.
2	NC	unconnected	No connection (STYLE 8, pin 2 NO CONNECTION) on this 3-lead SOT-23 package.
3	CATHODE	passive	Diode cathode terminal (STYLE 8, pin 3 CATHODE); the device is rated for 100 Vdc reverse voltage and 200 mAdc forward current.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-23
Category	Diodes
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Reverse Voltage Leakage Current (VR = 20 Vdc)	IR		25	nAdc	VR = 20 Vdc	2
Reverse Voltage Leakage Current (VR = 75 Vdc)	IR		5	Adc	VR = 75 Vdc	2
Diode Capacitance	CT		4	pF	VR = 0, f = 1.0 MHz	2
Forward Voltage	VF		1	Vdc	IF = 10 mAdc	2
Reverse Recovery Time	trr		4	ns	IF = IR = 10 mAdc (Figure 1)	2
Reverse Breakdown Voltage	V(BR)	100		Vdc	IR = 100 Adc	2
Reverse Voltage	VR		100	Vdc		1
Forward Current	IF		200	mAdc		1
Peak Forward Surge Current	IFM(surge)		500	mAdc		1
Junction and Storage Temperature Range	TJ, Tstg	-55	150	°C		1
Total Device Dissipation, FR-5 Board (Note 1), TA = 25°C	PD		225	mW	FR-5 board, TA = 25°C	1
Thermal Resistance, Junction-to-Ambient, FR-5 Board	RJA		556	°C/W	FR-5 board (Note 1)	1
Total Device Dissipation, Alumina Substrate (Note 2), TA = 25°C	PD		300	mW	Alumina substrate (Note 2), TA = 25°C	1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate	RJA		417	°C/W	Alumina substrate (Note 2)	1

CAD (KiCad official)

Symbol: SMMBD914LT1G
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: smmbd914lt1g-etched.step / smmbd914lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmbd914lt1g.step / smmbd914lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (4 pp, sha256 93918419f3183d5a, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# SMMBD914LT1G

**onsemi** · Switching Diodes · SOT-23

SMMBD914LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Diode anode terminal (STYLE 8, pin 1 ANODE); the device is rated for 100 Vdc reverse voltage and 200 mAdc forward current. |
| 2 | NC | unconnected | No connection (STYLE 8, pin 2 NO CONNECTION) on this 3-lead SOT-23 package. |
| 3 | CATHODE | passive | Diode cathode terminal (STYLE 8, pin 3 CATHODE); the device is rated for 100 Vdc reverse voltage and 200 mAdc forward current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Diodes |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Voltage Leakage Current (VR = 20 Vdc) | IR |  |  | 25 | nAdc | VR = 20 Vdc | 2 |
| Reverse Voltage Leakage Current (VR = 75 Vdc) | IR |  |  | 5 | Adc | VR = 75 Vdc | 2 |
| Diode Capacitance | CT |  |  | 4 | pF | VR = 0, f = 1.0 MHz | 2 |
| Forward Voltage | VF |  |  | 1 | Vdc | IF = 10 mAdc | 2 |
| Reverse Recovery Time | trr |  |  | 4 | ns | IF = IR = 10 mAdc (Figure 1) | 2 |
| Reverse Breakdown Voltage | V(BR) | 100 |  |  | Vdc | IR = 100 Adc | 2 |
| Reverse Voltage | VR |  |  | 100 | Vdc |  | 1 |
| Forward Current | IF |  |  | 200 | mAdc |  | 1 |
| Peak Forward Surge Current | IFM(surge) |  |  | 500 | mAdc |  | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Total Device Dissipation, FR-5 Board (Note 1), TA = 25°C | PD |  |  | 225 | mW | FR-5 board, TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA |  |  | 556 | °C/W | FR-5 board (Note 1) | 1 |
| Total Device Dissipation, Alumina Substrate (Note 2), TA = 25°C | PD |  |  | 300 | mW | Alumina substrate (Note 2), TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA |  |  | 417 | °C/W | Alumina substrate (Note 2) | 1 |

## CAD (KiCad official)

- Symbol: `SMMBD914LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `smmbd914lt1g-etched.step` / `smmbd914lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smmbd914lt1g.step` / `smmbd914lt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187839596081152) (4 pp, sha256 `93918419f3183d5a`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smmbd914lt1g-datasheet.pdf)