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Contents

README

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SMMBD7000LT1G

onsemi · Diodes - General Purpose · SOT-23-3

SMMBD7000LT1G from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode terminal of one diode in the dual switching diode; each diode is rated for 100 V reverse voltage and 200 mA forward current.
2 CATHODE passive Cathode terminal of the other diode in the dual switching diode; per-diode maximum ratings are 100 V reverse voltage and 200 mA forward current.
3 CATHODE/ANODE passive Common terminal shared by both diodes (labelled CATHODE-ANODE in Style 11); the datasheet gives no separate limit for this pin beyond the per-diode maximum ratings.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage V(BR) 100 Vdc I(BR) = 100 Adc 2
Reverse Voltage Leakage Current IR 1 Adc VR = 50 Vdc 2
Reverse Voltage Leakage Current IR2 3 Adc VR = 100 Vdc 2
Reverse Voltage Leakage Current IR3 100 Adc VR = 50 Vdc, 125°C 2
Forward Voltage VF 0.55 0.7 Vdc IF = 1.0 mAdc 2
Forward Voltage VF 0.67 0.82 Vdc IF = 10 mAdc 2
Forward Voltage VF 0.75 1.1 Vdc IF = 100 mAdc 2
Reverse Recovery Time trr 4 ns IF = IR = 10 mAdc (Figure 1) 2
Capacitance C 1.5 pF VR = 0 V 2
Reverse Voltage VR 100 V Each diode 1
Forward Current IF 200 mA Each diode 1
Forward Surge Current IFSM 1.6 A 60 Hz @ 1 cycle 1
Repetitive Peak Forward Current IFRM 0.5 A Pulse Wave = 1 sec, Duty Cycle = 66% 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C, FR-5 Board (Note 1) 1
Thermal Resistance, Junction to Ambient (FR-5 Board) RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C, Alumina Substrate (Note 2) 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: SMMBD7000LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: smmbd7000lt1g-etched.step / smmbd7000lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmbd7000lt1g.step / smmbd7000lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 adb3bef8fc24f3c7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF