SMD2N65

{
  "schema_version": 1,
  "type": "component",
  "slug": "smd2n65",
  "title": "SMD2N65",
  "brief": "HUAKE MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "smd2n65",
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    "extractor-text"
  ],
  "component": {
    "mpn": "SMD2N65",
    "manufacturer": "HUAKE",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "lbr": "smd2n65.lbr"
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    "distributor_links": {
      "lcsc": "C570146"
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      "checked_at": "2026-10-18T20:34:02Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
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    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; gate-source voltage limited to ±30 V (VGSS), threshold 2.0 to 4.0 V at ID=250 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain (middle lead, also the metal tab); VDSS 650 V, continuous ID 2.0 A at Tc=25C and pulsed IDM 8 A."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; continuous body-diode forward current 2.0 A and pulsed 8 A."
      }
    ],
    "provenance": {
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        "guard_notes": [
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          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "at": "2026-10-18T20:31:57"
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        "sha256": "78e7ad50954c6574",
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        "total": 3,
        "described": 3,
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        "refuses_to_fabricate": true
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  "metadata": {
    "specs": {
      "Manufacturer": "HUAKE",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
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        {
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        {
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        {
          "name": "Gate-Body Leakage Current, Forward",
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          "kind": "electrical",
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          "name": "Gate-Body Leakage Current, Reverse",
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          "name": "Gate Threshold Voltage",
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          "name": "Static Drain-Source On-Resistance",
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          "unit": "Ω",
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          "name": "Maximum Continuous Drain-Source Diode Forward Current",
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          "name": "Maximum Pulsed Drain-Source Diode Forward Current",
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          "name": "Drain-Source Diode Forward Voltage",
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          "typ": null,
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          "conditions": "VGS=0V, IS=2.0A",
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        {
          "name": "Breakdown Voltage Temperature Coefficient",
          "symbol": "ΔBVDSS/ΔTJ",
          "kind": "temperature_coefficient",
          "unit": "V/C",
          "min": null,
          "typ": 0.65,
          "max": null,
          "conditions": "ID=250μA (Referenced to 25C)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward Transconductance",
          "symbol": "gFS",
          "kind": "electrical",
          "unit": "S",
          "min": null,
          "typ": 1.9,
          "max": null,
          "conditions": "VDS=40 V, ID=1.0A (Note4)",
          "source_page": 2,
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        },
        {
          "name": "Input Capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 270,
          "max": null,
          "conditions": "VDS=25V, VGS=0V, f=1.0MHz",
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        {
          "name": "Output Capacitance",
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          "kind": "electrical",
          "unit": "pF",
          "min": null,
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          "max": null,
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        {
          "name": "Reverse Transfer Capacitance",
          "symbol": "Crss",
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          "name": "Turn-On Delay Time",
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          "kind": "timing",
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          "min": null,
          "typ": 7,
          "max": null,
          "conditions": "VDD = 325 V, ID = 2.0 A, RG = 25 Ω (Note4,5)",
          "source_page": 2,
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          "name": "Turn-On Rise Time",
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          "name": "Total Gate Charge",
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          "name": "Reverse Recovery Charge",
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          "typ": 1,
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          "source": "datasheet"
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    "name": "Ray"
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