# SMD2N65

**HUAKE** · MOSFETs · TO-252

SMD2N65 from HUAKE, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V (VGSS), threshold 2.0 to 4.0 V at ID=250 µA. |
| 2 | D | passive | Drain (middle lead, also the metal tab); VDSS 650 V, continuous ID 2.0 A at Tc=25C and pulsed IDM 8 A. |
| 3 | S | passive | Source; continuous body-diode forward current 2.0 A and pulsed 8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 2 | A | Tc=25C | 1 |
| Drain Current - Continuous | ID |  |  | 1.3 | A | Tc=100C | 1 |
| Drain Current -Pulsed | IDM |  |  | 8 | A | Note1 | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 120 | mJ | Note2 | 1 |
| Avalanche Current | IAR |  |  | 2 | A | Note1 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 4.4 | mJ | Note1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note3 | 1 |
| Power Dissipation | PD |  |  | 44 | W | TC=25C | 1 |
| Power Dissipation Derate above 25°C | PD |  | 0.35 |  | W/C | Derate above 25°C | 1 |
| Operating Junction Temperature | Tj |  |  | 150 | C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | C |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.87 | C /W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 110 | C /W |  | 1 |
| Drain-source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=650V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=520V, Tc=125C | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 4.5 | 5 | Ω | VGS=10 V, ID=1.0A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 2 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 8 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS=0V, IS=2.0A | 2 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.65 |  | V/C | ID=250μA (Referenced to 25C) | 2 |
| Forward Transconductance | gFS |  | 1.9 |  | S | VDS=40 V, ID=1.0A (Note4) | 2 |
| Input Capacitance | Ciss |  | 270 |  | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 40 |  | pF |  | 2 |
| Reverse Transfer Capacitance | Crss |  | 5 |  | pF |  | 2 |
| Turn-On Delay Time | td(on) |  | 7 |  | ns | VDD = 325 V, ID = 2.0 A, RG = 25 Ω (Note4,5) | 2 |
| Turn-On Rise Time | tr |  | 23 |  | ns |  | 2 |
| Turn-Off Delay Time | td(off) |  | 2 |  | ns |  | 2 |
| Turn-Off Fall Time | tf |  | 24 |  | ns |  | 2 |
| Total Gate Charge | Qg |  | 9 |  | nC | VDS = 520 V, ID =2.0 A, VGS = 10 V (Note4,5) | 2 |
| Gate-Source Charge | Qgs |  | 1.6 |  | nC |  | 2 |
| Gate-Drain Charge | Qgd |  | 4.3 |  | nC |  | 2 |
| Reverse Recovery Time | trr |  | 230 |  | ns | VGS =0V, IS=2.0A, d IF /dt=100A/μs (Note4) | 2 |
| Reverse Recovery Charge | Qrr |  | 1 |  | μC |  | 2 |

## CAD (KiCad official)

- Symbol: `SMD2N65`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `smd2n65-etched.step` / `smd2n65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smd2n65.step` / `smd2n65.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUAKE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588893218724827136) (5 pp, sha256 `78e7ad50954c6574`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smd2n65-datasheet.pdf)