component
SMCJ58A-L
Public Made by Adomby adom
Shandong Jingdao Microelectronics ESD And Surge Protection (TVS/ESD), SMC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SMCJ58A-L
Shandong Jingdao Microelectronics · ESD And Surge Protection (TVS/ESD) · SMC
SMCJ58A-L from Shandong Jingdao Microelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the unidirectional SMCJ58A-L TVS diode (58 V reverse stand-off, 64.4 V min breakdown, 93.6 V max clamping at 6.5 A peak pulse current). |
| 2 | A | passive | Anode of the unidirectional SMCJ58A-L TVS diode, connected to the protected circuit's return or ground side. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMC |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM | 58 | V | 2 | |||
| Breakdown voltage | VBR | 64.4 | 71.2 | V | @ IT = 1 mA | 2 | |
| Test current | IT | 1 | mA | 2 | |||
| Maximum clamping voltage | VC | 93.6 | V | @ IPP = 6.5 A | 2 | ||
| Peak pulse current | IPP | 6.5 | A | 10/1000 us waveform | 2 | ||
| Maximum reverse leakage | IR | 1 | μA | @ VRWM | 2 | ||
| Peak pulse power dissipation | PPPM | 600 | W | 10/1000 us waveform | 1 | ||
| Peak forward surge current | IFSM | 100 | A | 8.3ms single half sine-wave, superimposed on rated load (JEDEC), UNI | 1 | ||
| Maximum instantaneous forward voltage | VF | 3.5 | V | at 100 A, unidirectional only | 1 | ||
| Thermal resistance junction to ambient | RθJA | 75 | °C/W | Note 1 | 1 | ||
| Thermal resistance junction to lead | RθJL | 15 | °C/W | Note 1 | 1 | ||
| Operating junction and storage temperature range | Tj, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SMCJ58A-L - Footprint:
Diode_SMD:D_SMC - 3D model: SMC (KiCad packages3D, STEP)
- 3D model files:
smcj58a-l-etched.step/smcj58a-l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smcj58a-l.step/smcj58a-l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (4 pp, sha256
fe884aa643fb34c4, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMCJ58A-L
**Shandong Jingdao Microelectronics** · ESD And Surge Protection (TVS/ESD) · SMC
SMCJ58A-L from Shandong Jingdao Microelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the unidirectional SMCJ58A-L TVS diode (58 V reverse stand-off, 64.4 V min breakdown, 93.6 V max clamping at 6.5 A peak pulse current). |
| 2 | A | passive | Anode of the unidirectional SMCJ58A-L TVS diode, connected to the protected circuit's return or ground side. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMC |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM | | 58 | | V | | 2 |
| Breakdown voltage | VBR | 64.4 | | 71.2 | V | @ IT = 1 mA | 2 |
| Test current | IT | | 1 | | mA | | 2 |
| Maximum clamping voltage | VC | | | 93.6 | V | @ IPP = 6.5 A | 2 |
| Peak pulse current | IPP | | | 6.5 | A | 10/1000 us waveform | 2 |
| Maximum reverse leakage | IR | | | 1 | μA | @ VRWM | 2 |
| Peak pulse power dissipation | PPPM | | | 600 | W | 10/1000 us waveform | 1 |
| Peak forward surge current | IFSM | | | 100 | A | 8.3ms single half sine-wave, superimposed on rated load (JEDEC), UNI | 1 |
| Maximum instantaneous forward voltage | VF | | | 3.5 | V | at 100 A, unidirectional only | 1 |
| Thermal resistance junction to ambient | RθJA | | 75 | | °C/W | Note 1 | 1 |
| Thermal resistance junction to lead | RθJL | | 15 | | °C/W | Note 1 | 1 |
| Operating junction and storage temperature range | Tj, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `SMCJ58A-L`
- Footprint: `Diode_SMD:D_SMC`
- 3D model: SMC (KiCad packages3D, STEP)
- 3D model files: `smcj58a-l-etched.step` / `smcj58a-l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smcj58a-l.step` / `smcj58a-l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/smcj58a-l-datasheet.pdf) (4 pp, sha256 `fe884aa643fb34c4`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smcj58a-l-datasheet.pdf)