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SMCJ110A
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Shandong Jingdao Microelectronics TVS, SMC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SMCJ110A
Shandong Jingdao Microelectronics · TVS · SMC
SMCJ110A from Shandong Jingdao Microelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the unidirectional SMCJ110A TVS diode (the A suffix denotes unidirectional), which has a 110 V reverse stand-off voltage and 1500W peak pulse power at 10/1000μs. |
| 2 | Anode | passive | Anode of the unidirectional SMCJ110A TVS diode, which has a maximum clamping voltage of 177 V at 8.5 A peak pulse current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMC |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Stand-off Voltage | VRWM | 110 | V | 2 | |||
| Breakdown Voltage | VBR | 122 | 135 | V | @ IT | 2 | |
| Test Current | IT | 1 | mA | 2 | |||
| Maximum Reverse Leakage | IR | 1 | μA | @ VRWM | 2 | ||
| Max Clamping Voltage | VC | 177 | V | @ IPP | 2 | ||
| Peak Pulse Current | IPP | 8.5 | A | 10/1000 us waveform | 2 | ||
| Peak Pulse Power Dissipation | PPPM | 1500 | W | 10/1000 us waveform | 1 | ||
| Peak Forward Surge Current | IFSM | 200 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (UNI) | 1 | ||
| Maximum instantaneous forward voltage | VF | 3.5 | V | at 100 A, unidirectional only | 1 | ||
| Power dissipation on infinite heat sink | PD | 6.5 | W | TA=50°C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 75 | °C/W | Typical, Note 1 | 1 | ||
| Thermal Resistance Junction to Lead | RθJL | 15 | °C/W | Typical, Note 1 | 1 | ||
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SMCJ110A - Footprint:
Diode_SMD:D_SMC - 3D model: SMC (KiCad packages3D, STEP)
- 3D model files:
smcj110a-etched.step/smcj110a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smcj110a.step/smcj110a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (4 pp, sha256
2d0d84c94c8e56f9, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMCJ110A
**Shandong Jingdao Microelectronics** · TVS · SMC
SMCJ110A from Shandong Jingdao Microelectronics, in a SMC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the unidirectional SMCJ110A TVS diode (the A suffix denotes unidirectional), which has a 110 V reverse stand-off voltage and 1500W peak pulse power at 10/1000μs. |
| 2 | Anode | passive | Anode of the unidirectional SMCJ110A TVS diode, which has a maximum clamping voltage of 177 V at 8.5 A peak pulse current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMC |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Stand-off Voltage | VRWM | | 110 | | V | | 2 |
| Breakdown Voltage | VBR | 122 | | 135 | V | @ IT | 2 |
| Test Current | IT | | 1 | | mA | | 2 |
| Maximum Reverse Leakage | IR | | | 1 | μA | @ VRWM | 2 |
| Max Clamping Voltage | VC | | | 177 | V | @ IPP | 2 |
| Peak Pulse Current | IPP | | | 8.5 | A | 10/1000 us waveform | 2 |
| Peak Pulse Power Dissipation | PPPM | | | 1500 | W | 10/1000 us waveform | 1 |
| Peak Forward Surge Current | IFSM | | | 200 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (UNI) | 1 |
| Maximum instantaneous forward voltage | VF | | | 3.5 | V | at 100 A, unidirectional only | 1 |
| Power dissipation on infinite heat sink | PD | | | 6.5 | W | TA=50°C | 1 |
| Thermal Resistance Junction to Ambient | RθJA | | 75 | | °C/W | Typical, Note 1 | 1 |
| Thermal Resistance Junction to Lead | RθJL | | 15 | | °C/W | Typical, Note 1 | 1 |
| Operating Junction and Storage Temperature Range | Tj, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `SMCJ110A`
- Footprint: `Diode_SMD:D_SMC`
- 3D model: SMC (KiCad packages3D, STEP)
- 3D model files: `smcj110a-etched.step` / `smcj110a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smcj110a.step` / `smcj110a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/smcj110a-datasheet.pdf) (4 pp, sha256 `2d0d84c94c8e56f9`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smcj110a-datasheet.pdf)