component
SMBT3906DW1T1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SMBT3906DW1T1G
onsemi · Bipolar (BJT) · SOT-363
SMBT3906DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER 2 | passive | Emitter of the second transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 2 | BASE 2 | passive | Base of the second transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 3 | COLLECTOR 1 | passive | Collector of the first transistor in the dual-transistor package; the device maximum ratings are VCEO −40 Vdc, VCBO −40 Vdc, VEBO −5.0 Vdc and IC −200 mAdc. |
| 4 | EMITTER 1 | passive | Emitter of the first transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 5 | BASE 1 | passive | Base of the first transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 6 | COLLECTOR 2 | passive | Collector of the second transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -40 | Vdc | 2 | |||
| Collector−Base Breakdown Voltage | V(BR)CBO | -40 | Vdc | 2 | |||
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | 2 | |||
| Base Cutoff Current | IBL | -50 | nAdc | 2 | |||
| Collector Cutoff Current | ICEX | -50 | nAdc | 2 | |||
| DC Current Gain | hFE | 60 | IC = −0.1 mAdc, VCE = −1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 80 | IC = −1.0 mAdc, VCE = −1.0 Vdc | 2 | |||
| DC Current Gain | hFE | 100 | 300 | IC = −10 mAdc, VCE = −1.0 Vdc | 2 | ||
| DC Current Gain | hFE | 30 | IC = −100 mAdc, VCE = −1.0 Vdc | 2 | |||
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.25 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 2 | ||
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 2 | ||
| Base−Emitter Saturation Voltage | VBE(sat) | -0.65 | -0.85 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 2 | |
| Base−Emitter Saturation Voltage | VBE(sat) | -0.95 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 2 | ||
| Current−Gain − Bandwidth Product | fT | 250 | MHz | 2 | |||
| Output Capacitance | Cobo | 4.5 | pF | 2 | |||
| Input Capacitance | Cibo | 10 | pF | 2 | |||
| Input Impedance | hie | 2 | 12 | k | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 | |
| Voltage Feedback Ratio | hre | 0.1 | 10 | X 10−4 | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 | |
| Small−Signal Current Gain | hfe | 100 | 400 | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 | ||
| Output Admittance | hoe | 3 | 60 | mhos | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 | |
| Noise Figure | NF | 4 | dB | VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k, f = 1.0 kHz | 2 | ||
| Delay Time | td | 35 | ns | VCC = −3.0 Vdc, VBE = 0.5 Vdc | 2 | ||
| Rise Time | tr | 35 | ns | IC = −10 mAdc, IB1 = −1.0 mAdc | 2 | ||
| Storage Time | ts | 225 | ns | VCC = −3.0 Vdc, IC = −10 mAdc | 2 | ||
| Fall Time | tf | 75 | ns | IB1 = IB2 = −1.0 mAdc | 2 | ||
| Collector−Emitter Voltage | VCEO | -40 | Vdc | 1 | |||
| Collector−Base Voltage | VCBO | -40 | Vdc | 1 | |||
| Emitter−Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current − Continuous | IC | -200 | mAdc | 1 | |||
| Total Package Dissipation | PD | 150 | mW | TA = 25°C | 1 | ||
| Thermal Resistance, Junction−to−Ambient | RJA | 833 | °C/W | Note 1: device mounted on FR4 glass epoxy PCB, minimum recommended footprint | 1 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
SMBT3906DW1T1G - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
smbt3906dw1t1g-etched.step/smbt3906dw1t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smbt3906dw1t1g.step/smbt3906dw1t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
fd9fb75c4bde5c69, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMBT3906DW1T1G
**onsemi** · Bipolar (BJT) · SOT-363
SMBT3906DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER 2 | passive | Emitter of the second transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 2 | BASE 2 | passive | Base of the second transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 3 | COLLECTOR 1 | passive | Collector of the first transistor in the dual-transistor package; the device maximum ratings are VCEO −40 Vdc, VCBO −40 Vdc, VEBO −5.0 Vdc and IC −200 mAdc. |
| 4 | EMITTER 1 | passive | Emitter of the first transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 5 | BASE 1 | passive | Base of the first transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
| 6 | COLLECTOR 2 | passive | Collector of the second transistor in the dual-transistor package (Style 1 pin assignment, CASE 419B-02). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -40 | | | Vdc | | 2 |
| Collector−Base Breakdown Voltage | V(BR)CBO | -40 | | | Vdc | | 2 |
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 | | | Vdc | | 2 |
| Base Cutoff Current | IBL | | | -50 | nAdc | | 2 |
| Collector Cutoff Current | ICEX | | | -50 | nAdc | | 2 |
| DC Current Gain | hFE | 60 | | | | IC = −0.1 mAdc, VCE = −1.0 Vdc | 2 |
| DC Current Gain | hFE | 80 | | | | IC = −1.0 mAdc, VCE = −1.0 Vdc | 2 |
| DC Current Gain | hFE | 100 | | 300 | | IC = −10 mAdc, VCE = −1.0 Vdc | 2 |
| DC Current Gain | hFE | 30 | | | | IC = −100 mAdc, VCE = −1.0 Vdc | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) | | | -0.25 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 2 |
| Collector−Emitter Saturation Voltage | VCE(sat) | | | -0.4 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 2 |
| Base−Emitter Saturation Voltage | VBE(sat) | -0.65 | | -0.85 | Vdc | IC = −10 mAdc, IB = −1.0 mAdc | 2 |
| Base−Emitter Saturation Voltage | VBE(sat) | | | -0.95 | Vdc | IC = −50 mAdc, IB = −5.0 mAdc | 2 |
| Current−Gain − Bandwidth Product | fT | 250 | | | MHz | | 2 |
| Output Capacitance | Cobo | | | 4.5 | pF | | 2 |
| Input Capacitance | Cibo | | | 10 | pF | | 2 |
| Input Impedance | hie | 2 | | 12 | k | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Voltage Feedback Ratio | hre | 0.1 | | 10 | X 10−4 | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Small−Signal Current Gain | hfe | 100 | | 400 | | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Output Admittance | hoe | 3 | | 60 | mhos | VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz | 2 |
| Noise Figure | NF | | | 4 | dB | VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k, f = 1.0 kHz | 2 |
| Delay Time | td | | | 35 | ns | VCC = −3.0 Vdc, VBE = 0.5 Vdc | 2 |
| Rise Time | tr | | | 35 | ns | IC = −10 mAdc, IB1 = −1.0 mAdc | 2 |
| Storage Time | ts | | | 225 | ns | VCC = −3.0 Vdc, IC = −10 mAdc | 2 |
| Fall Time | tf | | | 75 | ns | IB1 = IB2 = −1.0 mAdc | 2 |
| Collector−Emitter Voltage | VCEO | -40 | | | Vdc | | 1 |
| Collector−Base Voltage | VCBO | -40 | | | Vdc | | 1 |
| Emitter−Base Voltage | VEBO | -5 | | | Vdc | | 1 |
| Collector Current − Continuous | IC | -200 | | | mAdc | | 1 |
| Total Package Dissipation | PD | | | 150 | mW | TA = 25°C | 1 |
| Thermal Resistance, Junction−to−Ambient | RJA | | | 833 | °C/W | Note 1: device mounted on FR4 glass epoxy PCB, minimum recommended footprint | 1 |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `SMBT3906DW1T1G`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `smbt3906dw1t1g-etched.step` / `smbt3906dw1t1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smbt3906dw1t1g.step` / `smbt3906dw1t1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589988469725831168) (9 pp, sha256 `fd9fb75c4bde5c69`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smbt3906dw1t1g-datasheet.pdf)