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SMBJ85A
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Shandong Jingdao Microelectronics TVS, SMB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SMBJ85A
Shandong Jingdao Microelectronics · TVS · SMB
SMBJ85A from Shandong Jingdao Microelectronics, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the unipolar SMBJ85A TVS, which is the terminal marked as cathode in the PINNING table. |
| 2 | Anode | passive | Anode terminal of the unipolar SMBJ85A TVS, which is the terminal marked as anode in the PINNING table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMB |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM | 85 | V | 2 | |||
| Breakdown voltage | VBR | 94.4 | 104 | V | Test current IT = 1 mA | 2 | |
| Reverse leakage current | 1 | μA | at VRWM | 2 | |||
| Max. clamp voltage | VC | 137 | V | at IPP = 4.4 A | 2 | ||
| Peak pulse current | IPP | 4.4 | A | 10/1000μs waveform (Note 1, Fig 3) | 2 | ||
| Peak pulse power dissipation | PPPM | 600 | W | 10/1000μS waveform (Note1, Note2, Fig.1) | 1 | ||
| Peak forward surge current | IFSM | 100 | A | 8.3ms single half sine-wave, JEDEC method (Note 3, Fig 4) | 1 | ||
| ESD voltage contact | VESD1 | 30 | kV | Contact, per IEC6100-4-2 (as printed) | 1 | ||
| ESD voltage air | VESD2 | 30 | kV | Air, per IEC6100-4-2 (as printed) | 1 | ||
| Operating junction and storage temperature range | Tj, Tstg | -65 | 150 | °C | Operating junction and storage temperature range | 1 | |
| Typical junction capacitance | CJ | 390 | pF | VR=4V, f=1MHz | 1 | ||
| Typical thermal resistance junction to ambient | RθJA | 100 | °C/W | Junction to ambient, mounted on 5 mm land areas (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
SMBJ85A - Footprint:
Diode_SMD:D_SMB - 3D model: SMB (KiCad packages3D, STEP)
- 3D model files:
smbj85a-etched.step/smbj85a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smbj85a.step/smbj85a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (4 pp, sha256
11a0cb29fa635344, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMBJ85A
**Shandong Jingdao Microelectronics** · TVS · SMB
SMBJ85A from Shandong Jingdao Microelectronics, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the unipolar SMBJ85A TVS, which is the terminal marked as cathode in the PINNING table. |
| 2 | Anode | passive | Anode terminal of the unipolar SMBJ85A TVS, which is the terminal marked as anode in the PINNING table. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMB |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRWM | | | 85 | V | | 2 |
| Breakdown voltage | VBR | 94.4 | | 104 | V | Test current IT = 1 mA | 2 |
| Reverse leakage current | | | | 1 | μA | at VRWM | 2 |
| Max. clamp voltage | VC | | | 137 | V | at IPP = 4.4 A | 2 |
| Peak pulse current | IPP | | | 4.4 | A | 10/1000μs waveform (Note 1, Fig 3) | 2 |
| Peak pulse power dissipation | PPPM | | | 600 | W | 10/1000μS waveform (Note1, Note2, Fig.1) | 1 |
| Peak forward surge current | IFSM | | | 100 | A | 8.3ms single half sine-wave, JEDEC method (Note 3, Fig 4) | 1 |
| ESD voltage contact | VESD1 | | | 30 | kV | Contact, per IEC6100-4-2 (as printed) | 1 |
| ESD voltage air | VESD2 | | | 30 | kV | Air, per IEC6100-4-2 (as printed) | 1 |
| Operating junction and storage temperature range | Tj, Tstg | -65 | | 150 | °C | Operating junction and storage temperature range | 1 |
| Typical junction capacitance | CJ | | 390 | | pF | VR=4V, f=1MHz | 1 |
| Typical thermal resistance junction to ambient | RθJA | | 100 | | °C/W | Junction to ambient, mounted on 5 mm land areas (Note 2) | 1 |
## CAD (KiCad official)
- Symbol: `SMBJ85A`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `smbj85a-etched.step` / `smbj85a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smbj85a.step` / `smbj85a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/smbj85a-datasheet.pdf) (4 pp, sha256 `11a0cb29fa635344`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smbj85a-datasheet.pdf)