# SMBJ11A

**Shandong Jingdao Microelectronics** · TVS · SMB

SMBJ11A from Shandong Jingdao Microelectronics, in a SMB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the unidirectional TVS diode; for this part (SMBJ11A, unidirectional) the datasheet lists a stand-off voltage of 11 V and a 600 W peak pulse power rating at 10/1000 µs. |
| 2 | Anode | passive | Anode terminal of the TVS diode; the datasheet gives an operating junction and storage temperature range of -65 °C to +150 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SMB |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage (min) | VBR | 12.2 |  |  | V | IT = 1 mA (test current column) | 2 |
| Breakdown voltage (max) | VBR |  |  | 13.5 | V | IT = 1 mA (test current column) | 2 |
| Reverse leakage current | ID |  |  | 1 | μA |  | 2 |
| Max. clamp voltage | VC |  |  | 18.2 | V | at IPP = 33.0 A (peak pulse current column) | 2 |
| Peak pulse power dissipation on 10/1000 μs waveform | PPPM |  |  | 600 | W | 10/1000 μs waveform (Note 1, Note 2, Fig 1) | 1 |
| Peak forward surge current, 8.3 ms single half sine-wave | IFSM |  |  | 100 | A | 8.3 ms single half sine-wave, JEDEC method (Note 3, Fig 4) | 1 |
| ESD voltage per IEC 61000-4-2 (contact) | VESD1 |  |  | 30 | kV | Contact discharge, per IEC 61000-4-2 | 1 |
| ESD voltage per IEC 61000-4-2 (air) | VESD2 |  |  | 30 | kV | Air discharge, per IEC 61000-4-2 | 1 |
| Operating junction and storage temperature range | Tj, Tstg | -65 |  | 150 | °C |  | 1 |
| Reverse stand-off voltage | VRWM |  | 11 |  | V | Unidirectional (UNI) device, stand-off voltage column | 2 |
| Typical junction capacitance | CJ |  | 390 |  | pF | VR = 4 V, f = 1 MHz | 1 |
| Typical thermal resistance, junction to ambient | RθJA |  | 100 |  | °C/W | Note 2: mounted on 5 mm land areas | 1 |

## CAD (KiCad official)

- Symbol: `SMBJ11A`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB (KiCad packages3D, STEP)
- 3D model files: `smbj11a-etched.step` / `smbj11a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smbj11a.step` / `smbj11a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shandong Jingdao Microelectronics datasheet](docs/smbj11a-datasheet.pdf) (4 pp, sha256 `11a0cb29fa635344`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smbj11a-datasheet.pdf)