# SM9435PSKC-TRG-VB

**VBsemi Elec** · MOSFETs · SO-8

SM9435PSKC-TRG-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET. Pins 1, 2, and 3 are internally connected sources; tie all together on the PCB to lower Rs and improve thermal performance. Continuous source current (diode conduction) IS = -2.3 A. |
| 2 | S | passive | Source terminal of the P-channel MOSFET (internally common with pins 1 and 3). Tie all source pins together on the PCB. |
| 3 | S | passive | Source terminal of the P-channel MOSFET (internally common with pins 1 and 2). Tie all source pins together on the PCB. |
| 4 | G | input | Gate terminal of the P-channel MOSFET. Absolute maximum VGS = ±20 V; typical gate threshold VGS(th) = -0.7 V to -2.0 V (ID = -250 µA). Typical gate charge Qg = 16 nC at VGS = -10 V; gate resistance Rg ≈ 8.8 Ω. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET. Pins 5, 6, 7, and 8 are internally connected drains; tie all together on the PCB for maximum current-handling and thermal dissipation to the drain pad. VDS max = -30 V; pulsed drain current IDM = -30 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET (internally common with pins 5, 7, and 8). Tie all drain pins together on the PCB. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET (internally common with pins 5, 6, and 8). Tie all drain pins together on the PCB. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET (internally common with pins 5, 6, and 7). Tie all drain pins together on the PCB. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Ordering variants

Same part, different packaging or reel option.

- `SM9435PSKC-TRG-VB`

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current, TA = 25 °C | ID | -5.8 |  |  | A | t ≤ 10 s | 1 |
| Continuous Drain Current, TA = 25 °C | ID | -4.1 |  |  | A | Steady State | 1 |
| Continuous Drain Current, TA = 70 °C | ID | -4.6 |  |  | A | t ≤ 10 s | 1 |
| Continuous Drain Current, TA = 70 °C | ID | -3.2 |  |  | A | Steady State | 1 |
| Pulsed Drain Current | IDM | -30 |  |  | A |  | 1 |
| Continuous Source Current (Diode Conduction) | IS | -2.3 |  |  | A | t ≤ 10 s | 1 |
| Continuous Source Current (Diode Conduction) | IS | -1.1 |  |  | A | Steady State | 1 |
| Maximum Power Dissipation, TA = 25 °C | PD |  |  | 2.5 | W | t ≤ 10 s | 1 |
| Maximum Power Dissipation, TA = 25 °C | PD |  |  | 1.3 | W | Steady State | 1 |
| Maximum Power Dissipation, TA = 70 °C | PD |  |  | 1.6 | W | t ≤ 10 s | 1 |
| Maximum Power Dissipation, TA = 70 °C | PD |  |  | 0.8 | W | Steady State | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (surface mounted) | RthJA |  | 40 | 50 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient (surface mounted) | RthJA |  | 70 | 95 | °C/W | Steady State | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 24 | 30 | °C/W | Steady State | 1 |
| Gate Threshold Voltage | VGS(th) | -0.7 |  | -2 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | -20 |  |  | A | VDS ≤ -10 V, VGS = -10 V | 2 |
| On-State Drain Current | ID(on) | -5 |  |  | A | VDS ≤ -5 V, VGS = -4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.033 | Ω | VGS = -10 V, ID = -5.8 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.043 | Ω | VGS = -6 V, ID = -5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.056 | Ω | VGS = -4.5 V, ID = -4.4 A | 2 |
| Diode Forward Voltage | VSD |  | -0.8 | -1.1 | V | IS = -2.3 A, VGS = 0 V | 2 |
| Turn-On Delay Time | td(on) |  | 14 | 25 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Rise Time | tr |  | 14 | 25 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 42 | 70 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Fall Time | tf |  | 30 | 50 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time | trr |  | 30 | 60 | ns | IF = -1.2 A, dI/dt = 100 A/µs | 2 |

## CAD (KiCad official)

- Symbol: `SM9435PSKC-TRG-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `sm9435pskc-trg-vb-etched.step` / `sm9435pskc-trg-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm9435pskc-trg-vb.step` / `sm9435pskc-trg-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603043543418494976) (None pp, sha256 `6c0d1c5d36b012c1`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm9435pskc-trg-vb-datasheet.pdf)