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SM7012
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Shenzhen Sunmoon Micro AC-DC Controllers & Regulators, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SM7012
Shenzhen Sunmoon Micro · AC-DC Controllers & Regulators · DIP-8
SM7012 from Shenzhen Sunmoon Micro, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Chip ground and the SOURCE terminal of the internal high-voltage MOSFET; pins 1 and 2 should be connected to a copper pour larger than 8*8mm for heat dissipation. |
| 2 | GND | power_in | Chip ground and the SOURCE terminal of the internal high-voltage MOSFET; pins 1 and 2 should be connected to a copper pour larger than 8*8mm for heat dissipation. |
| 3 | FB | input | Feedback input; FB current above IFBSD (0.9mA typ) turns off PWM and the chip enters burst mode, with maximum FB current rated 3mA. |
| 4 | VDD | power_in | Chip power supply with operating range of 9V to 38V; turn-on threshold 14.5V typ, turn-off threshold 8V typ, overvoltage protection at 39V typ. |
| 5 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
| 6 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
| 7 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
| 8 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen Sunmoon Micro |
| Package | DIP-8 |
| Category | Power Management ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD turn-on voltage | VDDON | 13 | 14.5 | 16 | V | TA=25℃, VDD=18V | 4 |
| VDD turn-off voltage | VDDOFF | 7 | 8 | 9 | V | TA=25℃, VDD=18V | 4 |
| DRAIN off-state leakage current | IDSS | 0.1 | mA | 4 | |||
| Drain-source breakdown voltage | BVDS | 730 | V | 4 | |||
| Drain pin max voltage | VDS(max) | -0.3 | 730 | V | TA=25℃ | 3 | |
| Drain pin max voltage at startup | VDS(ST) | -0.3 | 400 | V | TA=25℃ | 3 | |
| Supply voltage | VDD | -0.3 | 38 | V | TA=25℃ | 3 | |
| Clamp current | Ivdd | 10 | mA | TA=25℃ | 3 | ||
| Max feedback current | IFB | 3 | mA | TA=25℃ | 3 | ||
| Operating junction temperature | TJ | -40 | 150 | ℃ | TA=25℃ | 3 | |
| Storage temperature | TSTG | -55 | 150 | ℃ | TA=25℃ | 3 | |
| Thermal resistance junction-ambient | RthJA | 45 | ℃/W | PCB with 200mm2 copper, 35um thick, connected to all GND pins | 3 | ||
| VDD operating voltage | VDD | 9 | 38 | V | 1 | ||
| On resistance | RDS(on) | 19 | Ohm | ID=0.2A | 4 | ||
| VDD hysteresis threshold | VDDHYS | 6.5 | V | 4 | |||
| VDD overvoltage protection threshold | VDDOVP | 39 | V | 4 | |||
| VDD operating current 1 | IDD1 | 0.4 | mA | IFB=2.0mA | 4 | ||
| VDD operating current 2 | IDD2 | 1 | mA | IFB=0.5mA; ID=50mA | 4 | ||
| Charging current | IDDCH | -220 | uA | VDS=100V; VDD=5V | 4 | ||
| Oscillator frequency | FOSC | 60 | KHz | 4 | |||
| IFB/IDRAIN gain | GID | 320 | 4 | ||||
| Peak current threshold | ILIMIT | 400 | mA | VFB=0V | 4 | ||
| FB shutdown current | IFBSD | 0.9 | mA | 4 | |||
| FB input resistance | RFB | 1.23 | Kohm | ID=0mA | 4 | ||
| Leading edge blanking time | TLEB | 300 | nS | 4 | |||
| Minimum on time | TON(min) | 700 | nS | 4 | |||
| Overtemperature protection temperature | TOVT | 150 | ℃ | 4 | |||
| Overtemperature hysteresis | THYS | 30 | ℃ | 4 |
CAD (KiCad official)
- Symbol:
SM7012 - Footprint:
Package_DIP:DIP-8_W7.62mm - 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files:
sm7012-etched.step/sm7012-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm7012.step/sm7012.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen Sunmoon Micro datasheet (12 pp, sha256
e6a0ea4a124139f5, retrieved 2026-10-23, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SM7012
**Shenzhen Sunmoon Micro** · AC-DC Controllers & Regulators · DIP-8
SM7012 from Shenzhen Sunmoon Micro, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Chip ground and the SOURCE terminal of the internal high-voltage MOSFET; pins 1 and 2 should be connected to a copper pour larger than 8*8mm for heat dissipation. |
| 2 | GND | power_in | Chip ground and the SOURCE terminal of the internal high-voltage MOSFET; pins 1 and 2 should be connected to a copper pour larger than 8*8mm for heat dissipation. |
| 3 | FB | input | Feedback input; FB current above IFBSD (0.9mA typ) turns off PWM and the chip enters burst mode, with maximum FB current rated 3mA. |
| 4 | VDD | power_in | Chip power supply with operating range of 9V to 38V; turn-on threshold 14.5V typ, turn-off threshold 8V typ, overvoltage protection at 39V typ. |
| 5 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
| 6 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
| 7 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
| 8 | DRAIN | passive | DRAIN of the internal high-voltage MOSFET, also used as the startup charging path for the chip, with maximum voltage of 730V (400V during startup). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen Sunmoon Micro |
| Package | DIP-8 |
| Category | Power Management ICs |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD turn-on voltage | VDDON | 13 | 14.5 | 16 | V | TA=25℃, VDD=18V | 4 |
| VDD turn-off voltage | VDDOFF | 7 | 8 | 9 | V | TA=25℃, VDD=18V | 4 |
| DRAIN off-state leakage current | IDSS | | | 0.1 | mA | | 4 |
| Drain-source breakdown voltage | BVDS | 730 | | | V | | 4 |
| Drain pin max voltage | VDS(max) | -0.3 | | 730 | V | TA=25℃ | 3 |
| Drain pin max voltage at startup | VDS(ST) | -0.3 | | 400 | V | TA=25℃ | 3 |
| Supply voltage | VDD | -0.3 | | 38 | V | TA=25℃ | 3 |
| Clamp current | Ivdd | | | 10 | mA | TA=25℃ | 3 |
| Max feedback current | IFB | | | 3 | mA | TA=25℃ | 3 |
| Operating junction temperature | TJ | -40 | | 150 | ℃ | TA=25℃ | 3 |
| Storage temperature | TSTG | -55 | | 150 | ℃ | TA=25℃ | 3 |
| Thermal resistance junction-ambient | RthJA | | 45 | | ℃/W | PCB with 200mm2 copper, 35um thick, connected to all GND pins | 3 |
| VDD operating voltage | VDD | 9 | | 38 | V | | 1 |
| On resistance | RDS(on) | | 19 | | Ohm | ID=0.2A | 4 |
| VDD hysteresis threshold | VDDHYS | | 6.5 | | V | | 4 |
| VDD overvoltage protection threshold | VDDOVP | | 39 | | V | | 4 |
| VDD operating current 1 | IDD1 | | 0.4 | | mA | IFB=2.0mA | 4 |
| VDD operating current 2 | IDD2 | | 1 | | mA | IFB=0.5mA; ID=50mA | 4 |
| Charging current | IDDCH | | -220 | | uA | VDS=100V; VDD=5V | 4 |
| Oscillator frequency | FOSC | | 60 | | KHz | | 4 |
| IFB/IDRAIN gain | GID | | 320 | | | | 4 |
| Peak current threshold | ILIMIT | | 400 | | mA | VFB=0V | 4 |
| FB shutdown current | IFBSD | | 0.9 | | mA | | 4 |
| FB input resistance | RFB | | 1.23 | | Kohm | ID=0mA | 4 |
| Leading edge blanking time | TLEB | | 300 | | nS | | 4 |
| Minimum on time | TON(min) | | 700 | | nS | | 4 |
| Overtemperature protection temperature | TOVT | | 150 | | ℃ | | 4 |
| Overtemperature hysteresis | THYS | | 30 | | ℃ | | 4 |
## CAD (KiCad official)
- Symbol: `SM7012`
- Footprint: `Package_DIP:DIP-8_W7.62mm`
- 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files: `sm7012-etched.step` / `sm7012-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm7012.step` / `sm7012.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shenzhen Sunmoon Micro datasheet](docs/sm7012-datasheet.pdf) (12 pp, sha256 `e6a0ea4a124139f5`, retrieved 2026-10-23, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sm7012-datasheet.pdf)