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SM6T68CAY

STMicroelectronics · ESD And Surge Protection (TVS/ESD) · SMB(DO-214AA)

SM6T68CAY from STMicroelectronics, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SMB(DO-214AA)
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak pulse voltage, contact discharge (ISO10605, C = 330 pF, R = 330 Ω) VPP 30 kV ISO10605 C = 330 pF, R = 330 Ω, contact discharge 2
Peak pulse voltage, air discharge (ISO10605, C = 330 pF, R = 330 Ω) VPP 30 kV ISO10605 C = 330 pF, R = 330 Ω, air discharge 2
Peak pulse voltage, contact discharge (ISO10605 / IEC 61000-4-2) VPP 30 kV ISO10605 / IEC 61000-4-2 C = 150 pF, R = 330 Ω, contact discharge 2
Peak pulse voltage, air discharge (ISO10605 / IEC 61000-4-2) VPP 30 kV ISO10605 / IEC 61000-4-2 C = 150 pF, R = 330 Ω, air discharge 2
Peak pulse power dissipation PPP 600 W 10/1000 µs, Tj initial = Tamb 2
Storage temperature range Tstg -65 150 °C 2
Operating junction temperature range Tj -55 150 °C 2
Maximum lead temperature for soldering TL 260 °C during 10 s 2
Reverse leakage current at VRM, 25 °C IRM 0.2 µA at VRM, 25 °C 3
Reverse leakage current at VRM, 85 °C IRM 1 µA at VRM, 85 °C 3
Breakdown voltage VBR 64.6 V at IBR = 1 mA 3
Breakdown voltage VBR 71.4 V at IBR = 1 mA 3
Clamping voltage, 10/1000 µs VCL 92 V 10/1000 µs 3
Peak pulse current, 10/1000 µs IPP 6.5 A 10/1000 µs 3
Dynamic resistance, 10/1000 µs RD 3.17 Ω 10/1000 µs 3
Clamping voltage, 8/20 µs VCL 121 V 8/20 µs 3
Peak pulse current, 8/20 µs IPP 33 A 8/20 µs 3
Dynamic resistance, 8/20 µs RD 1.503 Ω 8/20 µs 3
Breakdown voltage VBR 68 V at IBR = 1 mA 3
Reverse stand-off voltage (test voltage column VRM) VRM 58.1 V column printed under IRM max at VRM; no min/max label 3
Breakdown voltage temperature coefficient αT 10.4 10-4/°C 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin • Lead finishing: matte tin plating Complies with the following standards 1

CAD (KiCad official)

  • Symbol: SM6T68CAY
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
  • 3D model files: sm6t68cay-etched.step / sm6t68cay-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm6t68cay.step / sm6t68cay.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 a139eecdd64ba8b1, retrieved 2026-10-16, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF