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Contents

README

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SM6T30CAY

STMicroelectronics · ESD And Surge Protection (TVS/ESD) · SMB(DO-214AA)

SM6T30CAY from STMicroelectronics, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SMB(DO-214AA)
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse leakage current IRM max at VRM IRM 0.2 µA at VRM, 25 °C 3
Reverse leakage current IRM max at VRM IRM 1 µA at VRM, 85 °C 3
Breakdown voltage VBR at IBR VBR 28.5 30 31.5 V at IBR = 1 mA 3
Clamping voltage VCL max (10/1000 µs) VCL 41.5 V 10/1000 µs surge, IPP max 14.5 A (same row) 3
Peak pulse current IPP max (10/1000 µs) IPP 14.5 A 10/1000 µs surge 3
Dynamic resistance RD max (10/1000 µs) RD 0.69 Ω 10/1000 µs surge 3
Clamping voltage VCL max (8/20 µs) VCL 53.5 V 8/20 µs surge, IPP max 75 A (same row) 3
Peak pulse current IPP max (8/20 µs) IPP 75 A 8/20 µs surge 3
Dynamic resistance RD max (8/20 µs) RD 0.293 Ω 8/20 µs surge 3
ISO10605 contact discharge peak pulse voltage (C = 330 pF, R = 330 Ω) VPP 30 kV ISO10605, C = 330 pF, R = 330 Ω, contact discharge 2
ISO10605 air discharge peak pulse voltage (C = 330 pF, R = 330 Ω) VPP 30 kV ISO10605, C = 330 pF, R = 330 Ω, air discharge 2
ISO10605 / IEC 61000-4-2 contact discharge peak pulse voltage (C = 150 pF, R = 330 Ω) VPP 30 kV ISO10605 / IEC 61000-4-2, C = 150 pF, R = 330 Ω, contact discharge 2
ISO10605 / IEC 61000-4-2 air discharge peak pulse voltage (C = 150 pF, R = 330 Ω) VPP 30 kV ISO10605 / IEC 61000-4-2, C = 150 pF, R = 330 Ω, air discharge 2
Peak pulse power dissipation PPP 600 W 10/1000 µs, Tj initial = Tamb 2
Storage temperature range Tstg -65 150 °C 2
Operating junction temperature range Tj -55 150 °C 2
Maximum lead temperature for soldering TL 260 °C during 10 s 2
Breakdown voltage temperature coefficient αT αT 9.7 10-4/°C VBR/VCL vs Tj per Table 2 footnotes 1 and 2 3

CAD (KiCad official)

  • Symbol: SM6T30CAY
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
  • 3D model files: sm6t30cay-etched.step / sm6t30cay-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm6t30cay.step / sm6t30cay.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 91ac5944c48e0eb9, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF