# SM6T150A

**STMicroelectronics** · TVS · SMB(DO-214AA)

SM6T150A from STMicroelectronics, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode; marked by the band on unidirectional SM6T150A devices (stand-off voltage VRM 128 V, breakdown VBR 143-158 V at 1 mA). |
| 2 | A | passive | Anode of the unidirectional SM6T150A TVS diode, which clamps at max 207 V at 2.9 A (10/1000 µs). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | SMB(DO-214AA) |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse stand-off voltage | VRM |  |  | 128 | V |  | 3 |
| Reverse leakage current at 25 °C | IRM |  |  | 0.2 | µA | @VRM, 25 °C | 3 |
| Reverse leakage current at 85 °C | IRM |  |  | 1 | µA | @VRM, 85 °C | 3 |
| Breakdown voltage | VBR | 143 | 150 | 158 | V | @IR = 1 mA; pulse test tp < 50 ms | 3 |
| Clamping voltage 10/1000 µs | VCL |  |  | 207 | V | @IPP = 2.9 A, 10/1000 µs | 3 |
| Dynamic resistance 10/1000 µs | RD |  |  | 16.9 | Ω | 10/1000 µs | 3 |
| Clamping voltage 8/20 µs | VCL |  |  | 265 | V | @IPP = 15 A, 8/20 µs | 3 |
| Dynamic resistance 8/20 µs | RD |  |  | 7.13 | Ω | 8/20 µs | 3 |
| Voltage temperature coefficient | αT |  | 10.8 |  | 10-4/°C |  | 3 |
| Peak pulse power dissipation | PPP |  |  | 600 | W | Tj initial = Tamb, 10/1000 µs | 2 |
| Storage temperature range | Tstg | -65 |  | 150 | °C |  | 2 |
| Operating junction temperature range | Tj | -55 |  | 150 | °C |  | 2 |
| Maximum lead temperature for soldering | TL |  |  | 260 | °C | during 10 s | 2 |
| Thermal resistance junction to leads | Rth(j-l) |  | 20 |  | °C/W |  | 2 |
| Thermal resistance junction to ambient | Rth(j-a) |  | 100 |  | °C/W | on printed circuit on recommended pad layout | 2 |

## CAD (KiCad official)

- Symbol: `SM6T150A`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
- 3D model files: `sm6t150a-etched.step` / `sm6t150a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm6t150a.step` / `sm6t150a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/sm6t150a.pdf) (10 pp, sha256 `9340708960a8d7f6`, retrieved 2026-11-06, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm6t150a-datasheet.pdf)