component
SM6796D1RL
Public Made by Adomby adom
SPS MOSFETs, DFN-8-EP(6.1x5.2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
SM6796D1RL
SPS · MOSFETs · DFN-8-EP(6.1x5.2)
SM6796D1RL from SPS, in a DFN-8-EP(6.1x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with continuous drain current rated 70.0 A at TA=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 2. |
| 4 | G | input | Gate of the MOSFET; gate-source voltage maximum is ±12 V with a threshold of 1 V min, 1.4 V typ and 1.9 V max. |
| 5 | D | passive | Drain of the MOSFET, connected with pins 6-8; drain-source voltage maximum is 30 V. |
| 6 | D | passive | Drain of the MOSFET, shared with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the MOSFET, shared with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the MOSFET, shared with pins 5-7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | DFN-8-EP(6.1x5.2) |
| Category | Transistors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID = -250uA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 1.9 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 | 5 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.5 | 7.2 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 82 | S | VDS=5V, ID=20A | 2 | ||
| Diode Forward Voltage | VSD | 0.72 | 1 | V | IS=1A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 70 | A | 2 | |||
| Input Capacitance | Ciss | 1350 | 1647 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 450 | 553 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 60 | 71 | pF | VGS=0V, VDS=15V, f=1MHz | 2 | |
| Gate resistance | Rg | 1.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Body Diode Reverse Recovery Time | trr | 13 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 22 | nC | IF=18A, dI/dt=500A/µs | 2 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 70 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 46 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 112 | A | 1 | |||
| Avalanche Current | IAR | 22.4 | A | 1 | |||
| Repetitive avalanche energy | EAR | 51.5 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 31 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 13 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 12 | 18 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 25 | 30 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead | RθJL | 7 | 12 | °C/W | Steady State | 1 | |
| Total Gate Charge | Qg (10V) | 10.5 | nC | VGS=10V, VDS=15V, ID=20A | 2 | ||
| Total Gate Charge | Qg (4.5V) | 5.25 | nC | VDS=15V, ID=20A | 2 | ||
| Gate Source Charge | Qgs | 2.1 | nC | 2 | |||
| Gate Drain Charge | Qgd | 3 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 6.5 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 5.2 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 18.2 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 5.85 | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
CAD (KiCad official)
- Symbol:
SM6796D1RL - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8-EP(6.1x5.2) (KiCad packages3D, STEP)
- 3D model files:
sm6796d1rl-etched.step/sm6796d1rl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm6796d1rl.step/sm6796d1rl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SPS datasheet (4 pp, sha256
6eb3869e78b24957, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SM6796D1RL
**SPS** · MOSFETs · DFN-8-EP(6.1x5.2)
SM6796D1RL from SPS, in a DFN-8-EP(6.1x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with continuous drain current rated 70.0 A at TA=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 2. |
| 4 | G | input | Gate of the MOSFET; gate-source voltage maximum is ±12 V with a threshold of 1 V min, 1.4 V typ and 1.9 V max. |
| 5 | D | passive | Drain of the MOSFET, connected with pins 6-8; drain-source voltage maximum is 30 V. |
| 6 | D | passive | Drain of the MOSFET, shared with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the MOSFET, shared with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the MOSFET, shared with pins 5-7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | DFN-8-EP(6.1x5.2) |
| Category | Transistors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID = -250uA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS=30V, VGS=0V | 2 |
| Gate-Body leakage current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 1.9 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 3.5 | 5 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 5.5 | 7.2 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS | | 82 | | S | VDS=5V, ID=20A | 2 |
| Diode Forward Voltage | VSD | | 0.72 | 1 | V | IS=1A | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 70 | A | | 2 |
| Input Capacitance | Ciss | | 1350 | 1647 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | | 450 | 553 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 60 | 71 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance | Rg | | | 1.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Body Diode Reverse Recovery Time | trr | | | 13 | ns | IF=-8A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | | 22 | nC | IF=18A, dI/dt=500A/µs | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 70 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 46 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 112 | A | | 1 |
| Avalanche Current | IAR | | | 22.4 | A | | 1 |
| Repetitive avalanche energy | EAR | | | 51.5 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD | | | 31 | W | TA=25°C | 1 |
| Power Dissipation | PD | | | 13 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RθJA | | 12 | 18 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA | | 25 | 30 | °C/W | Steady State | 1 |
| Maximum Junction-to-Lead | RθJL | | 7 | 12 | °C/W | Steady State | 1 |
| Total Gate Charge | Qg (10V) | | 10.5 | | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Total Gate Charge | Qg (4.5V) | | 5.25 | | nC | VDS=15V, ID=20A | 2 |
| Gate Source Charge | Qgs | | 2.1 | | nC | | 2 |
| Gate Drain Charge | Qgd | | 3 | | nC | | 2 |
| Turn-On Delay Time | tD(on) | | 6.5 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr | | 5.2 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) | | 18.2 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 5.85 | | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
## CAD (KiCad official)
- Symbol: `SM6796D1RL`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8-EP(6.1x5.2) (KiCad packages3D, STEP)
- 3D model files: `sm6796d1rl-etched.step` / `sm6796d1rl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm6796d1rl.step` / `sm6796d1rl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SPS datasheet](docs/sm6796d1rl-datasheet.pdf) (4 pp, sha256 `6eb3869e78b24957`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sm6796d1rl-datasheet.pdf)