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SM6366ED1RL-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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SM6366ED1RL-HXY

HXY MOSFET · MOSFETs · DFN5x6-8L

SM6366ED1RL-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, pin 1 end of the package, connected in parallel with pins 2 and 3.
2 S passive Source of the N-channel MOSFET, connected in parallel with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, connected in parallel with pins 1 and 2.
4 G input Gate of the N-channel MOSFET, with absolute maximum VGS of ±20V and threshold VGS(th) of 1V min to 2.5V max.
5 D passive Drain of the N-channel MOSFET (30V VDS max), connected to the exposed drain pad together with pins 6, 7 and 8.
6 D passive Drain of the N-channel MOSFET (30V VDS max), connected to the exposed drain pad together with pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET (30V VDS max), connected to the exposed drain pad together with pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET (30V VDS max), connected to the exposed drain pad together with pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=30V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 2.6 3.3 mΩ VGS=10V,ID=20A 2
Drain-Source On Resistance RDS(ON) 3.8 5 mΩ VGS=4.5V,ID=10A 2
Source-Drain Diode Forward Voltage VSD 1 V VGS=0V,IS=1A 2
Continuous Source Current IS 120 A 2
Pulsed Source Current ISM 360 A 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current at TC=100℃ ID@TC=100℃ 57 A VGS @ 10V 1
Pulsed Drain Current IDM 360 A 1
Single Pulse Avalanche Energy EAS 125 mJ 1
Total Power Dissipation PD 115 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 1.3 ℃/W 1

CAD (KiCad official)

  • Symbol: SM6366ED1RL-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: sm6366ed1rl-hxy-etched.step / sm6366ed1rl-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm6366ed1rl-hxy.step / sm6366ed1rl-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 7c6e7c5347352ad5, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF