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Contents

README

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SM514T9RL

SPS · MOSFETs · TO-252

SM514T9RL from SPS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; Gate-Source voltage limited to ±20 V maximum, with threshold VGS(th) of 1.2 V min, 1.8 V typ and 2.4 V max at ID=250µA.
2 D passive Drain, also connected to the exposed tab; VDS 30 V maximum, continuous ID 46.0 A at TA=25°C and pulsed IDM 73.6 A.
3 S passive Source; body diode continuous current IS is 46 A maximum with forward voltage VSD of 1 V maximum at IS=1A.

Key specifications

Parameter Value
Manufacturer SPS
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID = -250uA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 1 5 uA VDS=30V, VGS=0V 2
Gate-Body leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.4 V VDS = VGS ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 4.1 5.9 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 8.3 11.9 mΩ VGS=4.5V, ID=20A 2
Forward Transconductance gFS 40 S VDS=5V, ID=20A 2
Diode Forward Voltage VSD 0.72 1 V IS=1A,VGS=155V 2
Maximum Body-Diode Continuous Current IS 46 A 2
Input Capacitance Ciss 1187 1448 pF VGS=0V, VDS=15V, f=1MHz 2
Output Capacitance Coss 483 594 pF VGS=0V, VDS=15V, f=1MHz 2
Reverse Transfer Capacitance Crss 60 71 pF VGS=0V, VDS=15V, f=1MHz 2
Gate resistance Rg 1.8 Ω VGS=0V, VDS=0V, f=1MHz 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 46 A TA=25°C 1
Continuous Drain Current ID 36 A TA=70°C 1
Pulsed Drain Current IDM 73.6 A 1
Avalanche Current IAR 14.7 A 1
Repetitive avalanche energy EAR 33.9 mJ L=0.1mH 1
Power Dissipation PD 50 W TA=25°C 1
Power Dissipation PD 25 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 29 44 °C/W t ≤ 10s 1
Maximum Junction-to-Ambient RθJA 59 71 °C/W Steady State 1
Maximum Junction-to-Lead RθJL 17 28 °C/W Steady State 1
Total Gate Charge Qg (10V) 8.8 nC VGS=10V, VDS=15V, ID=20A 2
Total Gate Charge Qg (4.5V) 4.4 nC VGS=10V, VDS=15V, ID=20A 2
Gate Source Charge Qgs 2.52 nC VGS=10V, VDS=15V, ID=20A 2
Gate Drain Charge Qgd 3.6 nC VGS=10V, VDS=15V, ID=20A 2
Turn-On DelayTime tD(on) 7.35 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Turn-On Rise Time tr 5.88 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Turn-Off DelayTime tD(off) 20.58 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 6.615 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 14.7 ns IF=-8A, dI/dt=500A/µs 2
Body Diode Reverse Recovery Charge Qrr 24 nC IF=18A, dI/dt=500A/µs 2

CAD (KiCad official)

  • Symbol: SM514T9RL
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sm514t9rl-etched.step / sm514t9rl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm514t9rl.step / sm514t9rl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SPS datasheet (4 pp, sha256 ed9b4bbf16e69bfa, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF