# SM4953PRL-HXY

**HXY MOSFET** · MOSFETs · SOP-8

SM4953PRL-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of channel 1 (P-channel MOSFET); the absolute maximum drain-source voltage is -30V and gate-source voltage is ±20V. |
| 2 | G1 | input | Gate of channel 1; gate-source voltage is limited to ±20V per the absolute maximum ratings. |
| 3 | S2 | passive | Source of channel 2 (P-channel MOSFET); the absolute maximum drain-source voltage is -30V and gate-source voltage is ±20V. |
| 4 | G2 | input | Gate of channel 2; gate-source voltage is limited to ±20V per the absolute maximum ratings. |
| 5 | D2 | passive | Drain of channel 2 (P-channel MOSFET); continuous drain current is rated at -5.3A and pulsed at -20A. |
| 6 | D2 | passive | Drain of channel 2 (P-channel MOSFET); continuous drain current is rated at -5.3A and pulsed at -20A. |
| 7 | D1 | passive | Drain of channel 1 (P-channel MOSFET); continuous drain current is rated at -5.3A and pulsed at -20A. |
| 8 | D1 | passive | Drain of channel 1 (P-channel MOSFET); continuous drain current is rated at -5.3A and pulsed at -20A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID | -5.3 |  |  | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM | -20 |  |  | A | Note 1: repetitive rating, pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation | PD |  |  | 2.6 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 49 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | -33 |  | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-24V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 35 | 42 | mR | VGS=-10V, ID=-5.3A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 70 | 85 | mR | VGS=-4.5V, ID=-4.2A | 2 |
| Forward Transconductance | gFS | 4 | 7 |  | S | VDS=-15V,ID=-4.5A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=-5.3A | 2 |

## CAD (KiCad official)

- Symbol: `SM4953PRL-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `sm4953prl-hxy-etched.step` / `sm4953prl-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm4953prl-hxy.step` / `sm4953prl-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/sm4953prl-hxy-datasheet.pdf) (7 pp, sha256 `b701f9d925a0896d`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm4953prl-hxy-datasheet.pdf)