component

SM4818PRL-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorsm4818prl-hxyfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17h ago
viewers sm4818prl-hxy: viewers · Ray 17h ago
package.json Publish 0.1.0 · Ray 17h ago
page.json Set visibility: public · Ray 17h ago
README.md Publish 0.1.0 · Ray 17h ago
sm4818prl-hxy-etched.glb Publish 0.1.0 · Ray 17h ago
sm4818prl-hxy-etched.step sm4818prl-hxy: factory component page (tier=lcsc) · Ray 17h ago
sm4818prl-hxy-hero.glb sm4818prl-hxy: hero GLB from the etched model (keeps the MPN mark) · Ray 17h ago
sm4818prl-hxy-hero.overlay.json Publish 0.1.0 · Ray 17h ago
sm4818prl-hxy.glb Publish 0.1.0 · Ray 17h ago
sm4818prl-hxy.kicad_mod Publish 0.1.0 · Ray 17h ago
sm4818prl-hxy.kicad_sym Publish 0.1.0 · Ray 17h ago
sm4818prl-hxy.lbr Publish 0.1.0 · Ray 17h ago
sm4818prl-hxy.step Publish 0.1.0 · Ray 17h ago

SM4818PRL-HXY

HXY MOSFET · MOSFETs · SOP-8

SM4818PRL-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1, rated VDS 30V and ID 8.5A at TA=25°C.
2 G1 input Gate of N-channel MOSFET 1, max VGS ±20V with threshold 1.2V to 2.5V.
3 S2 passive Source of N-channel MOSFET 2, rated VDS 30V and ID 8.5A at TA=25°C.
4 G2 input Gate of N-channel MOSFET 2, max VGS ±20V with threshold 1.2V to 2.5V.
5 D2 passive Drain of N-channel MOSFET 2, VDS max 30V, pulsed drain current 37A.
6 D2 passive Drain of N-channel MOSFET 2, VDS max 30V, pulsed drain current 37A (shorted with pin 5).
7 D1 passive Drain of N-channel MOSFET 1, VDS max 30V, pulsed drain current 37A.
8 D1 passive Drain of N-channel MOSFET 1, VDS max 30V, pulsed drain current 37A (shorted with pin 7).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V Tj=25°C 1
Gate-Source Voltage VGS 20 V Printed as +20 1
Drain Current ID@TA=25℃ 8.5 A VGS @ 4.5V 1
Drain Current ID@TA=70℃ 5.8 A VGS @ 4.5V 1
Pulsed Drain Current IDM 37 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 85 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Gate Threshold Voltage VGS(th) 1.2 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 7.3 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 37 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Static Drain-Source On-Resistance RDS(ON) 18 mΩ VGS=10V, ID=7A 2
Static Drain-Source On-Resistance RDS(ON) 28 mΩ VGS=4.5V, ID=4A 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.034 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th) -5.8 mV/℃ 2
Forward Transconductance gfs 6 S VDS=5V, ID=7A 2
Gate Resistance Rg 2.5 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 6 nC VDS=15V, VGS=4.5V, ID=7A 2
Gate-Source Charge Qgs 2.5 nC VDS=15V, VGS=4.5V, ID=7A 2
Gate-Drain Charge Qgd 2.1 nC VDS=15V, VGS=4.5V, ID=7A 2
Turn-On Delay Time Td(on) 2.4 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Rise Time Tr 7.8 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Turn-Off Delay Time Td(off) 22 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Fall Time Tf 4 ns VDD=15V, VGS=10V, RG=3.3, ID=7A 2
Input Capacitance Ciss 572 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 80 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 65 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Recovery Time trr 20 nS IF=7A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 1.1 nC IF=7A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SM4818PRL-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sm4818prl-hxy-etched.step / sm4818prl-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm4818prl-hxy.step / sm4818prl-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 669079f7aa638e72, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF