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SM4807PRL-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SM4807PRL-HXY

HXY MOSFET · MOSFETs · SOP-8

SM4807PRL-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of P-channel MOSFET 1; the datasheet gives only device-level limits (VDS = -30 V, VGS = ±20 V, ID = -5.3 A continuous) and no pin-specific rating.
2 G1 input Gate terminal of P-channel MOSFET 1; gate-source voltage is rated ±20 V.
3 S2 passive Source terminal of P-channel MOSFET 2; the datasheet gives only device-level limits (VDS = -30 V, VGS = ±20 V, ID = -5.3 A continuous) and no pin-specific rating.
4 G2 input Gate terminal of P-channel MOSFET 2; gate-source voltage is rated ±20 V.
5 D2 passive Drain terminal of P-channel MOSFET 2; drain-source voltage is rated -30 V and continuous drain current -5.3 A.
6 D2 passive Drain terminal of P-channel MOSFET 2 (tied to pin 5 internally per the D2 grouping); drain-source voltage is rated -30 V and continuous drain current -5.3 A.
7 D1 passive Drain terminal of P-channel MOSFET 1 (tied to pin 8 per the D1 grouping); drain-source voltage is rated -30 V and continuous drain current -5.3 A.
8 D1 passive Drain terminal of P-channel MOSFET 1; drain-source voltage is rated -30 V and continuous drain current -5.3 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 -33 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -3 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 35 42 mR VGS=-10V, ID=-5.3A 2
Drain-Source On-State Resistance RDS(ON) 70 85 mR VGS=-4.5V, ID=-4.2A 2
Forward Transconductance gFS 4 7 S VDS=-15V,ID=-4.5A 2
Diode Forward Voltage VSD -1.2 V VGS=0V,IS=-5.3A 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID -5.3 A 1
Drain Current-Pulsed IDM -20 A Note 1 1
Maximum Power Dissipation PD 2.6 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 49 ℃/W Note 2 1

CAD (KiCad official)

  • Symbol: SM4807PRL-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: sm4807prl-hxy-etched.step / sm4807prl-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sm4807prl-hxy.step / sm4807prl-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 249afdbc27c03ad3, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF