# SM4800PRL-HXY

**HXY MOSFET** · MOSFETs · SOP-8

SM4800PRL-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); VDS rating 30V, ID 6A at TA=25C. |
| 2 | G1 | input | Gate of MOSFET 1; VGS maximum ±20V, threshold 1.2V min to 2.4V max at ID=250µA. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel); VDS rating 30V, ID 6A at TA=25C. |
| 4 | G2 | input | Gate of MOSFET 2; VGS maximum ±20V, threshold 1.2V min to 2.4V max at ID=250µA. |
| 5 | D2 | passive | Drain of MOSFET 2, shorted with pin 6; VDS 30V max, ID 6A, pulsed IDM 30A. |
| 6 | D2 | passive | Drain of MOSFET 2, shorted with pin 5; VDS 30V max, ID 6A, pulsed IDM 30A. |
| 7 | D1 | passive | Drain of MOSFET 1, shorted with pin 8; VDS 30V max, ID 6A, pulsed IDM 30A. |
| 8 | D1 | passive | Drain of MOSFET 1, shorted with pin 7; VDS 30V max, ID 6A, pulsed IDM 30A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V | Tj=25°C | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V | printed +20 | 1 |
| Drain Current | ID@TA=25℃ |  |  | 6 | A | VGS @ 4.5V | 1 |
| Drain Current | ID@TA=70℃ |  |  | 5 | A | VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM |  |  | 30 | A |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a |  |  | 62.5 | ℃/W |  | 1 |
| Thermal Resistance Junction-Ambient (Fig 12) | RθJA |  | 90 |  | °C/W | Figure 12 note | 4 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=-250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 5 | µA | VDS=30V, VGS=0V, TJ=55°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.4 | V | VDS=VGS ID=250µA | 2 |
| On state drain current | ID(ON) | 30 |  |  | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 25 | 30 | mΩ | VGS=10V, ID=6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 40 | 48 | mΩ | VGS=10V, ID=6A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 33 | 42 | mΩ | VGS=4.5V, ID=5A | 2 |
| Forward Transconductance | gFS |  | 15 |  | S | VDS=5V, ID=6A | 2 |
| Diode Forward Voltage | VSD |  | 0.76 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 2.5 | A |  | 2 |
| Input Capacitance | Ciss |  | 255 | 310 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 45 |  | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 35 | 50 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance | Rg | 1.6 | 3.25 | 4.9 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg(10V) |  | 5.2 | 6.3 | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Total Gate Charge | Qg(4.5V) |  | 2.55 | 3.2 | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Gate Source Charge | Qgs |  | 0.85 |  | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Gate Drain Charge | Qgd |  | 1.3 |  | nC | VGS=10V, VDS=15V, ID=6A | 2 |
| Turn-On DelayTime | tD(on) |  | 4.5 |  | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 2.5 |  | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 14.5 |  | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 3.5 |  | ns | VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 8.5 |  | ns | IF=6A, dI/dt=100A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 2.2 |  | nC | IF=6A, dI/dt=100A/µs | 2 |

## CAD (KiCad official)

- Symbol: `SM4800PRL-HXY`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `sm4800prl-hxy-etched.step` / `sm4800prl-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm4800prl-hxy.step` / `sm4800prl-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/sm4800prl-hxy-datasheet.pdf) (7 pp, sha256 `8c6993e1a203a313`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm4800prl-hxy-datasheet.pdf)