component
SM4614BPRL
Public Made by Adomby adom
SPS MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
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| viewers | 10d ago |
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| page.json | 10d ago |
| README.md | 10d ago |
| sm4614bprl-etched.glb | 10d ago |
| sm4614bprl-etched.step | 10d ago |
| sm4614bprl-hero.glb | 10d ago |
| sm4614bprl-hero.overlay.json | 10d ago |
| sm4614bprl.glb | 10d ago |
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| sm4614bprl.step | 10d ago |
SM4614BPRL
SPS · MOSFETs · SOIC-8
SM4614BPRL from SPS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of the n-channel MOSFET (S2) in the top-view SOP8 pinout; the part is described as a single P-channel device, so this pin's use is not explained. |
| 2 | G2 | input | Gate of the n-channel MOSFET (G2) in the top-view SOP8 pinout; the part is described as a single P-channel device, so this pin's use is not explained. |
| 3 | S1 | passive | Source of the P-channel MOSFET (S1); Drain-Source voltage is rated -40 V. |
| 4 | G1 | input | Gate of the P-channel MOSFET (G1); gate-source voltage is rated ±20 V maximum, with a threshold of -1.3 V min, -2 V typ and -2.6 V max. |
| 5 | D1 | passive | Drain of the P-channel MOSFET (D1); continuous drain current is -6.0 A at TA=25°C. |
| 6 | D1 | passive | Drain of the P-channel MOSFET (D1), common with pin 5; continuous drain current is -6.0 A at TA=25°C. |
| 7 | D2 | passive | Drain of the n-channel MOSFET (D2) in the top-view SOP8 pinout; the part is described as a single P-channel device, so this pin's use is not explained. |
| 8 | D2 | passive | Drain of the n-channel MOSFET (D2), common with pin 7; the part is described as a single P-channel device, so this pin's use is not explained. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | SOIC-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -6 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -5 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -9.6 | A | 1 | |||
| Avalanche Current | IAR | -1.9 | A | 1 | |||
| Repetitive avalanche energy | EAR | -4.4 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 157 | 236 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 315 | 378 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Lead | RθJL | 94 | 151 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | ID = -250uA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-40V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | uA | VDS=-40V, VGS=0V | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.3 | -2 | -2.6 | V | VDS = VGS ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 44.1 | 63 | mΩ | VGS=-10V, ID=-6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 69.3 | 90.1 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Maximum Body-Diode Continuous Current | IS | -6 | A | 2 | |||
| Diode Forward Voltage | VSD | -0.72 | -1 | V | IS=-1A,VGS=0V | 2 | |
| Forward Transconductance | gFS | 46 | S | VDS=-5V, ID=-6A | 2 | ||
| Input Capacitance | Ciss | 940 | 1146 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 97 | 119 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 72 | 85 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | |
| Gate resistance | Rg | 2.15 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Total Gate Charge (10V) | Qg | 8.4 | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 | ||
| Total Gate Charge (4.5V) | Qg | 4.2 | nC | 2 | |||
| Gate Source Charge | Qgs | 3.01 | nC | 2 | |||
| Gate Drain Charge | Qgd | 4.3 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 8.5 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 6.8 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 23.8 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 7.65 | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 17 | ns | IF=-8A, dI/dt=500A/µs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 11.5 | nC | IF=18A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
SM4614BPRL - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
sm4614bprl-etched.step/sm4614bprl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sm4614bprl.step/sm4614bprl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SPS datasheet (4 pp, sha256
ea5f995d7655c9d5, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).